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2N5415 PDF预览

2N5415

更新时间: 2024-01-12 19:50:47
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体小信号双极晶体管开关
页数 文件大小 规格书
2页 61K
描述
PNP LOW POWER SILICON TRANSISTOR

2N5415 技术参数

生命周期:Transferred包装说明:CYLINDRICAL, O-MBCY-W3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.15
最大集电极电流 (IC):1 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):30
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
最高工作温度:175 °C封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP最大功率耗散 (Abs):10 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:WIRE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):15 MHz
最大关闭时间(toff):10000 ns最大开启时间(吨):1000 ns
Base Number Matches:1

2N5415 数据手册

 浏览型号2N5415的Datasheet PDF文件第2页 
TECHNICAL DATA  
PNP LOW POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 485  
Devices  
Qualified Level  
JAN  
JANTX  
JANTXV  
2N5415  
2N5415S  
2N5416  
2N5416S  
MAXIMUM RATINGS  
Ratings  
Symbol 2N5415 2N5416 Units  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
200  
300  
Vdc  
Vdc  
Vdc  
Adc  
VCEO  
VCBO  
VEBO  
IC  
200  
350  
6.0  
1.0  
TO- 5*  
2N5415, 2N5416  
Total Power Dissipation @ TA = +250C  
@ TC = +250C  
0.75  
10  
W
W
0C  
PT  
Operating & Storage Temperature Range  
-65 to +200  
Top, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
17.5  
R
qJC  
2N5415S, 2N5416S  
TO-39*  
(TO-205AD)  
*See appendix A for  
1) Derate linearly 4.28 mW/0C for TA > +250C  
2) Derate linearly 57.1 mW/0C for TC > +250C  
package outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Cutoff Current  
VCE = 150 Vdc  
VCE = 200 Vdc  
VCE = 250 Vdc  
VCE = 300 Vdc  
mAdc  
mAdc  
mAdc  
mAdc  
2N5415  
2N5415  
2N5416  
2N5416  
50  
1.0  
50  
ICEO  
1.0  
Emitter-Base Cutoff Current  
VEB = 6.0 Vdc  
IEBO  
mAdc  
20  
Collector-Emitter Cutoff Current  
VCE = 200 Vdc, VBE = 1.5 Vdc  
VCE = 300 Vdc, VBE = 1.5 Vdc  
Collector-Base Cutoff Current  
VCB = 175 Vdc  
VCB = 280 Vdc  
Collector-Base Cutoff Current  
VCB = 200 Vdc  
mAdc  
mAdc  
2N5415  
2N5416  
ICEX  
50  
50  
mAdc  
mAdc  
2N5415  
2N5416  
ICBO1  
50  
50  
2N5415  
2N5416  
ICBO2  
500  
500  
VCB = 350 Vdc  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 1 of 2  

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