Datasheet > 2N5401J18Z

2N5401J18Z

更新时间： 2024-11-28 05:44:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
14页	512K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN

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2N5401J18Z 数据手册

2N5401

MMBT5401

TO-92

SOT-23

Mark: 2L

PNP General Purpose Amplifier

This device is designed as a general purpose amplifier and switch

for applications requiring high voltages.

Absolute Maximum Ratings*

TA= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

150

160

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

600

°C

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3) All voltages (V) and currents (A) are negative polarity for PNP transistors.

Thermal Characteristics

TA= 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N5401

*MMBT5401

P_D

Total Device Dissipation

Derate above 25 C

625

5.0

350

2.8

mW/ C

Thermal Resistance, Junction to Case

83.3

R_θ

C/W

Thermal Resistance, Junction to Ambient

200

357

R_θ

C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2001 Fairchild Semiconductor Corporation

2N5401/MMBT5401, Rev A

12 3 4 5 6 7...14

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