Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON POWER SWITCHING TRANSISTORS
2N5320, 2N5321 NPN
2N5322, 2N5323 PNP
TO-39
Metal Can Package
Medium Power Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS
SYMBOL
2N5322
2N5323
DESCRIPTION
2N5320
2N5321
UNITS
VCEO
75
50
75
50
V
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Base Current
VCBO
VEBO
IC
100
7
75
5
100
7
75
5
V
V
A
A
2.0
1.0
IB
PD
Power Dissipation@ Ta=25ºC
1
W
5.71
10
57.14
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
Derate Above 25ºC
mW/ ºC
W
PD
mW/ ºC
Operating And Storage Junction
Temperature Range
Tj, Tstg
- 65 to +200
ºC
THERMAL CHARACTERISTICS
Junction to Ambient in free air
Junction to Case
Rth (j-a)
Rth (j-c)
175
17.5
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
TEST CONDITION
IC=100mA, IB=0
2N5320/5322
DESCRIPTION
Collector Emitter Voltage
SYMBOL
MIN
MAX
UNITS
VCEO
75
50
V
V
2N5321/5323
VCE=70V, VBE=1.5V, Tc=150ºC
ICEX
Collector Cut Off Current
5
mA
2N5320/5322
VCE=45V, VBE=1.5V, Tc=150ºC
5
mA
2N5321/5323
VCE=100V, VBE=1.5V
100
mA
2N5320/5322
VCE=75V, VBE=1.5V
100
100
mA
mA
2N5321/5323
VBE=5V, IC=0
IEBO
Emitter Cut Off Current
2N5321/5323
VBE=7V, IC=0
100
mA
2N5320/5322
Data Sheet
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Continental Device India Limited