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2N5323-BP

更新时间: 2024-02-07 22:41:10
品牌 Logo 应用领域
美微科 - MCC 开关晶体管
页数 文件大小 规格书
2页 373K
描述
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, ROHS COMPLIANT, METAL CAN-3

2N5323-BP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-39包装说明:CYLINDRICAL, O-MBCY-W3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.73
最大集电极电流 (IC):2 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-39JESD-30 代码:O-MBCY-W3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):1000 ns
最大开启时间(吨):100 nsBase Number Matches:1

2N5323-BP 数据手册

 浏览型号2N5323-BP的Datasheet PDF文件第2页 
M C C  
TM  
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Micro Commercial Components  
2N5323  
Features  
10 Watts Power Dissipation.  
PNP Silicon  
Switching Transistor  
Metal can case.  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Maximum Ratings  
Symbol  
Rating  
Rating  
50  
75  
5.0  
2.0  
1.0  
-55 to +150  
-55 to +150  
Unit  
V
V
V
A
TO-39  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current, Continuous  
Base Current  
IB  
A
TJ  
TSTG  
Operating Junction Temperature  
Storage Temperature  
OC  
OC  
Thermal Characteristics  
Symbol  
Rating  
Max  
10  
0.057  
Unit  
W
PD  
Total Device Dissipation  
Derate above 25OC  
mW/OC  
OC/W  
RJC  
Thermal Resistance, Junction to Case  
17.5  
Electrical Characteristics @ 25OC Unless Otherwise Specified  
Symbol  
Parameter  
Min  
Max  
Units  
OFF CHARACTERISTICS  
V(BR)CEO  
Collector-Emitter Breakdown Voltage  
(IC=100mAdc, IB=0)  
50  
---  
Vdc  
ICEX  
Collector Cutoff Current  
(VCE=75Vdc, VEB(off)=1.5Vdc)  
(VCE=45Vdc, VEB(off)=1.5Vdc, TC=150OC)  
Emitter Cutoff Current  
---  
---  
0.1  
5.0  
mAdc  
IEBO  
(VEB=5.0Vdc, IC=0)  
---  
0.1  
mAdc  
ON CHARACTERISTICS  
hFE  
DC Current Gain (1)  
(VCE=4.0Vdc, IC=500mAdc)  
Collector-Emitter Saturation Voltage (1)  
(IC=500mAdc, IB=50mAdc)  
Base-Emitter On Voltage  
40  
---  
---  
250  
1.2  
1.4  
---  
VCE(sat)  
VBE(on)  
Vdc  
Vdc  
DIMENSIONS  
(IC=500mAdc, VCE=4.0Vdc)  
INCHES  
MIN  
.335  
.305  
.240  
.50  
MM  
SMALL-SIGNAL CHARACTERISTICS  
DIM  
A
B
C
D
E
MAX  
.370  
.335  
.260  
.75  
MIN  
8.509  
7.747  
6.096  
12.7  
MAX  
9.40  
NOTE  
hfe  
Small-signal current gain  
(VCE=4.0Vdc, IC=50mAdc,f=10MHz)  
5.0  
---  
---  
8.509  
6.604  
19.05  
SWITCHING CHARACTERISTICS  
ton  
Turn-On Time  
(VCC=30Vdc, IC=500mAdc,IB1=50mAdc)  
Turn-Off Time  
(VCC=30Vdc,  
.200  
5.08  
ns  
ns  
---  
---  
100  
F
.029  
-----  
.009  
44°  
.045  
.050  
.031  
46°  
7.366  
-----  
0.229  
44°  
11.43  
1.27  
7.874  
46°  
toff  
G
H
J
1000  
IC=500mAdc,IB1=IB2=50mAdc)  
K
L
.028  
.016  
.034  
.021  
0.711  
0.406  
0.864  
0.533  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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