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2N5190G PDF预览

2N5190G

更新时间: 2024-01-16 10:39:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关PC局域网
页数 文件大小 规格书
6页 144K
描述
Silicon NPN Power Transistors

2N5190G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.74
最大集电极电流 (IC):4 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-126JESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):40 W表面贴装:NO
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):2 MHzVCEsat-Max:1.4 V
Base Number Matches:1

2N5190G 数据手册

 浏览型号2N5190G的Datasheet PDF文件第1页浏览型号2N5190G的Datasheet PDF文件第2页浏览型号2N5190G的Datasheet PDF文件第3页浏览型号2N5190G的Datasheet PDF文件第4页浏览型号2N5190G的Datasheet PDF文件第5页 
2N5190G, 2N5191G, 2N5192G  
PACKAGE DIMENSIONS  
TO−225  
CASE 77−09  
ISSUE AB  
E
NOTES:  
A1  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. NUMBER AND SHAPE OF LUGS OPTIONAL.  
Q
A
MILLIMETERS  
DIM MIN  
MAX  
3.00  
1.50  
0.90  
0.88  
0.63  
11.10  
7.80  
2.54  
16.63  
2.54  
3.30  
4.20  
A
A1  
b
2.40  
1.00  
0.60  
0.51  
0.39  
10.60  
7.40  
2.04  
14.50  
1.27  
2.90  
3.80  
D
P
b2  
c
1
2
3
D
E
e
L
L1  
P
L1  
Q
L
STYLE 1:  
PIN 1. EMITTER  
2. COLLECTOR  
3. BASE  
2X b2  
e
2X  
c
b
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2N5191/D  

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