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2N5087RLRAG PDF预览

2N5087RLRAG

更新时间: 2024-11-21 03:56:15
品牌 Logo 应用领域
安森美 - ONSEMI 晶体放大器小信号双极晶体管
页数 文件大小 规格书
7页 156K
描述
Amplifier Transistor PNP Silicon

2N5087RLRAG 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.19Is Samacsys:N
其他特性:LOW NOISE最大集电极电流 (IC):0.05 A
集电极-发射极最大电压:50 V配置:SINGLE
最小直流电流增益 (hFE):250JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):40 MHzBase Number Matches:1

2N5087RLRAG 数据手册

 浏览型号2N5087RLRAG的Datasheet PDF文件第2页浏览型号2N5087RLRAG的Datasheet PDF文件第3页浏览型号2N5087RLRAG的Datasheet PDF文件第4页浏览型号2N5087RLRAG的Datasheet PDF文件第5页浏览型号2N5087RLRAG的Datasheet PDF文件第6页浏览型号2N5087RLRAG的Datasheet PDF文件第7页 
2N5087  
Preferred Device  
Amplifier Transistor  
PNP Silicon  
Features  
Pb−Free Packages are Available*  
http://onsemi.com  
3 COLLECTOR  
MAXIMUM RATINGS  
2
BASE  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
50  
Unit  
Vdc  
V
CEO  
V
CBO  
1 EMITTER  
50  
Vdc  
V
EBO  
3.0  
50  
Vdc  
Collector Current − Continuous  
I
C
mAdc  
TO−92  
CASE 29  
STYLE 1  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
P
1.5  
12  
W
mW/°C  
C
D
1
Derate above 25°C  
1
2
2
3
3
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to +150  
°C  
stg  
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
MARKING DIAGRAM  
Thermal Resistance, Junction−to−Ambient  
Thermal Resistance, Junction−to−Case  
R
q
JA  
JC  
R
q
83.3  
2N  
5087  
AYWW G  
G
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
RecommendedOperating Conditions may affect device reliability.  
A
Y
= Assembly Location  
= Year  
WW  
= Work Week  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
2N5087  
Package  
Shipping  
TO−92  
5000 Units / Bulk  
5000 Units / Bulk  
2N5087G  
TO−92  
(Pb−Free)  
2N5087RLRAG  
TO−92  
2000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
downloadthe ON Semiconductor Soldering and Mounting Techniques Reference  
Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
March, 2007 − Rev. 4  
2N5087/D  

2N5087RLRAG 替代型号

型号 品牌 替代类型 描述 数据表
MMBT5087LT1G ONSEMI

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Low Noise Transistor
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Amplifier Transistor PNP Silicon

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