Datasheet > 2N5002_1

2N5002_1

更新时间： 2022-09-16 13:01:53

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管
页数	文件大小	规格书
2页	48K
描述
NPN POWER SILICON TRANSISTOR

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数据手册

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2N5002_1 数据手册

TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/534

DEVICES

LEVELS

2N5002

2N5004

JAN

JANTX

JANTXV

JANS

ABSOLUTE MAXIMUM RATINGS (T_C= +25°C unless otherwise noted)

Parameters / Test Conditions

Collector-Emitter Voltage

Symbol

Value

Unit

V_CEO

V_CBO

V_EBO

100

5.5

Collector-Base Voltage

Emitter-Base Voltage

I_{C (3)}

I_C

5.0

2.0

Collector Current

Total Power Dissipation

@ T_A= +25°C ⁽¹⁾

@ T_C= +25°C ⁽²⁾

P_T

Operating & Storage Junction Temperature Range

Thermal Resistance, Junction-to Case

T_J, T_stg

R_θJC

-65 to +200

°C

3.0

°C/W

TO-59

Thermal Resistance, Junction-to Ambient

R_θJA

Note:

1) Derate linearly 11.4 mW/°C for T_A> +25°C

2) Derate linearly 331 mW/°C for T_C> +25°C

3) This value applies for P_W≤ 8.3 ms, duty cycle ≤ 1%

ELECTRICAL CHARACTERISTICS (T_A= +25°C, unless otherwise noted)

Parameters / Test Conditions

OFF CHARACTERISTICS

Symbol

Min.

Max.

Unit

Collector-Emitter Breakdown Voltage

I_C= 100mAdc

V_(BR)CEO

I_CEO

Vdc

Collector-Emitter Cutoff Current

µAdc

V_CE= 40Vdc, I_B= 0

Collector-Emitter Cutoff Current

_CE= 60Vdc, V_BE= 0Vdc

I_CES

1.0

µAdc

mAdc

V_CE= 100Vdc, V_BE= 0Vdc

Emitter-Base Cutoff Current

_BE= 4.0Vdc, I_C= 0

I_EBO

1.0

mAdc

V_BE= 5.5Vdc, I_C= 0

T4-LDS-0038 Rev. 2 (081508)

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