生命周期: | Obsolete | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.77 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 10 A | 集电极-发射极最大电压: | 80 V |
最小直流电流增益 (hFE): | 30 | JESD-30 代码: | O-MUPM-D3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 极性/信道类型: | PNP |
表面贴装: | NO | 端子形式: | SOLDER LUG |
端子位置: | UPPER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N5008 | SSDI |
获取价格 |
10 AMP HIGH SPEED NPN TRANSISTOR 100 VOLTS | |
2N5008 | DIGITRON |
获取价格 |
TRANSISTOR,BJT,NPN,80V V(BR)CEO,10A I(C),STR-1/4 | |
2N5009 | SSDI |
获取价格 |
10 AMP HIGH SPEED PNP TRANSISTOR | |
2N5009 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 3 Pin, | |
2N5009E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 3 Pin, | |
2N5010 | MICROSEMI |
获取价格 |
NPN SILICON TRANSISTOR | |
2N5010 | DIGITRON |
获取价格 |
TRANSISTOR,BJT,NPN,500V V(BR)CEO,500MA I(C),TO-5 | |
2N5010 | SEME-LAB |
获取价格 |
SILICON EPITAXIAL NPN TRANSISTOR | |
2N5010 | NJSEMI |
获取价格 |
NPN TO-39/TO-5 | |
2N5010 |
获取价格 |
Silicon Epitaxial NPN Transistor |