Datasheet > 2N5003V

2N5003V

更新时间： 2024-10-02 17:01:23

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	520K
描述
50V, Dual N Channel, Small Signal MOSFETs

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数据手册

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2N5003V 数据手册

Dual N-Channel Enhancement Mode MOSFET

2N5003V

Features



Low on-resistance

High-speed switching

Drive circuits can be simple

Parallel use is easy

JESD22-A114-B: 2

Typical Applications



N-channel enhancement mode effect transistor

Switching application

Mechanical Data



Case: SOT-563

Molding Compound: UL Flammability Classification Rating 94V-0

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202,

Method 208

SOT-563

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

2N5003V

SOT-563

3000 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Symbol

Value

Unit

Drain-to-Source Voltage

V_DSS

V_GSS

I_D

±20

Gate-to-Source Voltage

Continuous Drain Current ^*1

300

Pulsed Drain Current (t_p= 10μs)

Power Dissipation (T_A= 25°C ) ^*1

Operating Junction Temperature Range

Storage Temperature Range

I_DM

2000

P_D

0.25

T_J

-55 ~ +150

°C

T_STG

Thermal Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Thermal Resistance Junction-to-Air ^*1

R_θJA

500

°C /W

MTM0550A: October 2023 [2.1]

www.gmesemi.com

12 3 4 5

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