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2N4910 PDF预览

2N4910

更新时间: 2024-01-07 15:40:24
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管局域网
页数 文件大小 规格书
2页 57K
描述
isc Silicon NPN Power Transistor

2N4910 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:HERMETICALLY SEALED, CERAMIC, SMD1, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.68
外壳连接:COLLECTOR最大集电极电流 (IC):4 A
集电极-发射极最大电压:40 V配置:SINGLE
最小直流电流增益 (hFE):20JEDEC-95代码:TO-276AB
JESD-30 代码:R-CBCC-N3元件数量:1
端子数量:3封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):3 MHzBase Number Matches:1

2N4910 数据手册

 浏览型号2N4910的Datasheet PDF文件第1页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
2N4910  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
TYP.  
MAX UNIT  
VCEO(SUS)  
Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0  
40  
V
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Collector Cutoff Current  
Collector Cutoff Current  
Collector Cutoff Current  
Emitter Cutoff Current  
IC= 1A; IB= 0.1A  
IC= 1A; IB= 0.1A  
IC= 1A ; VCE= 1V  
0.6  
1.3  
1.3  
V
VCE  
VBE  
VBE  
(sat)  
(sat)  
(on)  
V
V
VCE= 40V;VBE( )= 1.5V  
0.1  
1.0  
off  
ICEX  
mA  
mA  
mA  
mA  
VCE= 40V;VBE( )= 1.5V;TC=150℃  
off  
ICEO  
ICBO  
IEBO  
hFE-1  
hFE-2  
hFE-3  
fT  
VCE= 20V; IB= 0  
0.5  
0.1  
1.0  
VCB= 40V; IE= 0  
VEB= 5V; IC= 0  
DC Current Gain  
IC= 50mA ; VCE= 1V  
IC= 500mA ; VCE= 1V  
IC= 1A ; VCE= 1V  
40  
20  
10  
3
DC Current Gain  
100  
DC Current Gain  
Current-GainBandwidth Product  
Output Capacitance  
MHz  
pF  
IC= 0.25A; VCE= 10V, ftest= 1MHz  
IE= 0; VCB= 10V; ftest= 100kHz  
COB  
100  
2
isc Websitewww.iscsemi.cn  

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