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2N4860UB PDF预览

2N4860UB

更新时间: 2024-11-22 08:29:27
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
2页 50K
描述
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, SURFACE MOUNT PACKAGE-3

2N4860UB 数据手册

 浏览型号2N4860UB的Datasheet PDF文件第2页 
TECHNICAL DATA  
N-CHANNEL J-FET  
Qualified per MIL-PRF-19500/ 385  
Devices  
Qualified  
Level  
JAN  
2N4861  
2N4856  
2N4857  
2N4858  
2N4859  
2N4860  
JANTX  
2N4856UB 2N4857UB 2N4858UB 2N4859UB 2N4860UB 2N4861UB  
JANTXV  
ABSOLUTE MAXIMUM RATINGS (TC = +250C unless otherwise noted)  
2N4856 2N4859  
Parameters / Test Conditions  
Symbol 2N4857 2N4860 Unit  
2N4858 2N4861  
Gate-Source Voltage  
VGS  
VDS  
VDG  
IG  
-40  
40  
40  
-30  
30  
30  
V
V
V
Drain-Source Voltage  
Drain-Gate Voltage  
Gate Current  
TO-18*  
(TO-206AA)  
50  
mA  
Power Dissipation  
TA = +250C (1)  
TC = +250C(2)  
PT  
0.36  
1.8  
-65 to +200  
W
W
0C  
Surface Mount  
(UB version)  
Operating Junction & Storage Temperature Range  
(1) Derate linearly 2.06 mW/0C for TA > 250C.  
(2) Derate linearly 10.3 mW/0C for TC > 250C.  
Tj, Tstg  
*See appendix A  
for package  
outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Parameters / Test Conditions  
Symbol  
Min.  
Max.  
Units  
Gate-Source Breakdown Voltage  
VDS = 0, IG = 1.0 mAdc  
2N4856, 2N4857, 2N4858  
2N4859, 2N4860, 2N4861  
V
(BR)GSS  
-40  
-30  
Vdc  
Gate-Source “Off” State Voltage  
VDS = 15 Vdc, ID = 0.5 hAdc  
2N4856, 2N4859  
2N4857, 2N4860  
2N4858, 2N4861  
-4.0  
-2.0  
-0.8  
-10  
-6.0  
-4.0  
VGS(on)  
Vdc  
Gate Reverse Current  
VDS = 0, VGS = -20 Vdc  
VDS = 0, VGS = -15 Vdc  
Drain Current  
2N4856, 2N4857, 2N4858  
2N4859, 2N4860, 2N4861  
IGSS  
-0.25  
-0.25  
hA  
hA  
ID(off)  
0.25  
VGS = -10 Vds, VDS = 15 Vdc  
6 Lake Street, Lawrence, MA 01841  
022802  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

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