生命周期: | Transferred | 包装说明: | POST/STUD MOUNT, O-MUPM-D3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.57 | 最大集电极电流 (IC): | 70 A |
集电极-发射极最大电压: | 120 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 10 | JEDEC-95代码: | TO-114 |
JESD-30 代码: | O-MUPM-D3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 175 °C |
封装主体材料: | METAL | 封装形状: | ROUND |
封装形式: | POST/STUD MOUNT | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 350 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | SOLDER LUG | 端子位置: | UPPER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 10 MHz |
VCEsat-Max: | 1.8 V |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N4866E3 | MICROSEMI | Power Bipolar Transistor, 90A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-114, Metal, |
获取价格 |
|
2N4867 | INTERSIL | N-CHANNEL JFET |
获取价格 |
|
2N4867 | INTERFET | N-Channel Silicon Junction Field-Effect Transistor |
获取价格 |
|
2N4867 | NJSEMI | N-CHANNEL SILICON JUNCTION FET |
获取价格 |
|
2N4867A | NJSEMI | N-CHANNEL JFET |
获取价格 |
|
2N4867A | INTERFET | N-Channel Silicon Junction Field-Effect Transistor |
获取价格 |