Datasheet > 2N4860

2N4860

更新时间： 2024-11-18 20:48:03

品牌	Logo	应用领域
DIGITRON		开关晶体管
页数	文件大小	规格书
3页	289K
描述
Small Signal Field-Effect Transistor

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中文翻译

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技术参数
数据手册

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2N4860 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	Base Number Matches：	1

2N4860 数据手册

2N4856-2N4861

N CHANNEL JFETS

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Parameters

Symbol

V_GS

2N4856, 2N4857, 2N4858

2N4859, 2N4860, 2N4861

Unit

Gate-source voltage

Drain-source voltage

Drain-gate voltage

Gate current

-40

-30

V_DS

V_DG

I_G

Power dissipation

T_A= 25°C⁽¹⁾

T_C= 25°C⁽²⁾

P_T

0.36

1.8

°C

Operating and storage temperature range

T_J, T_stg

-65 to +200

Derate linearly 2.06 mW/°C for T_A> 25°C.

Derate linearly 10.3 mW/°C for T_C> 25°C

ELECTRICAL CHARACTERISTICS (T_C= 25°C unless otherwise noted)

Parameters

Symbol

Min

Max

Unit

Gate-source breakdown voltage

2N4856, 2N4857, 2N4858

V_(BR)GSS

-40

-30

Vdc

(VDS = 0, IG = 1.0µAdc)

2N4859, 2N4860, 2N4861

Gate-source “off” voltage

2N4856, 2N4859

2N4857, 2N4860

2N4858, 2N4861

-4.0

-2.0

-0.8

-10

-6.0

-4.0

V_GS(off)

Vdc

ŋAdc)

(VDS = 15Vdc, ID = 0.5

Gate-reverse current

(VDS = 0, VGS = -20Vdc)

(VDS = 0, VGS = -15Vdc)

2N4856, 2N4857, 2N4858

2N4859, 2N4860, 2N4861

I_GSS

-0.25

ŋA

Drain current

I_D(off)

0.25

(VGS = -10Vdc, VDS = 15 Vdc)

Drain current

2N4856, 2N4859

2N4857, 2N4860

2N4858, 2N4861

175

100

I_DSS

(VGS = 0, VDS = 15Vdc)

8.0

Static drain – source “on” state resistance

2N4856, 2N4859

2N4857, 2N4860

2N4858, 2N4861

r_ds(on)

(VGS = 0, ID = 1.0mAdc)

Drain source “on” state voltage

(VGS = 0, ID = 20mAdc)

2N4856, 2N4859

2N4857, 2N4860

2N4858, 2N4861

0.75

0.50

V_DS(on)

Vdc

(VGS = 0, ID = 10mAdc)

(VGS = 0, ID = 5.0mAdc)

Small signal, common source reverse transfer capacitance

(VGS = -10Vdc, VDS = 0, f = 1.0MHz)

C_rss

8.0

≥ 500µH)

(C1 = 0.1µF, L1 = L2

Rev. 20150515

12 3

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