Datasheet > 2N4441

2N4441

更新时间： 2024-11-07 20:26:27

品牌	Logo	应用领域
DIGITRON		栅栅极
页数	文件大小	规格书
5页	715K
描述
Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 50; Max TMS Bridge Input Voltage: 5.1; Max DC Reverse Voltage: 2; Capacitance: 50; Package: TO-127

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2N4441 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.74
Is Samacsys：	N	Base Number Matches：	1

2N4441 数据手册

2N4441-2N4444

SILICON CONTROLLED RECTIFIERS

High-reliability discrete products

and engineering services since 1977

FEATURES



Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.

Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak repetitive forward and reverse blocking voltage⁽¹⁾

2N4441

2N4442

2N4443

2N4444

V_RRM, V_DRM

200

400

600

Volts

Non repetitive peak reverse blocking voltage

(t = 5ms (max.) duration)

2N4441

V_RSM

Volts

2N4442

300

500

700

2N4443

2N4444

Forward current RMS (all conduction angles)

Average on state current, T_C= 73°C

I_T(RMS)

I_T(AV)

Amps

5.1

Peak non-repetitive surge current

I_TSM

Amps

(1/2 cycle, 60Hz preceded and followed by rated current and voltage)

Circuit fusing considerations, T_J= -40 to +100°C; t = 8.3ms

Forward peak gate power

I²t

P_GM

P_G(AV)

I_GM

V_RGM

T_J

A²s

Watts

Amps

Volts

°C

Average gate power

0.5

Forward peak gate current

Peak reverse gate voltage

Operating junction temperature range

-40 to +100

-40 to +150

Storage temperature range

T_stg

°C

Mounting torque (6-32 screw)⁽²⁾

In. lb.

Note 1: Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with

a constant current source such that the voltage ratings of the devices are exceeded.

Note 2: Torque rating applies with use of torque washer. Mounting torque in excess of 8 in. lbs. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are

common. Soldering temperatures shall not exceed 225°C.

THERMAL CHARACTERISTICS

Characteristic

Thermal resistance, junction to case

Thermal resistance, junction to ambient

Symbol

R_ӨJC

Typical

Maximum

Unit

°C/W

2.5

R_ӨJA

Rev. 20130117

12 3 4 5

中文翻译

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与2N4441相关器件

型号	品牌	获取价格	描述	数据表
2N4442	MOTOROLA	获取价格	SILICON CONTROLLED RECTIFIERS
2N4442	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 200; Max TMS Bridge Inp
2N4443	MOTOROLA	获取价格	SILICON CONTROLLED RECTIFIERS
2N4443	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 400; Max TMS Bridge Inp
2N4444	MOTOROLA	获取价格	SILICON CONTROLLED RECTIFIERS
2N4444	NJSEMI	获取价格	SCR, V(DRM) = 600V TO 699.9V
2N4444	DIGITRON	获取价格	Silicon Controlled Rectifier; Max Peak Repetitive Reverse Voltage: 600; Max TMS Bridge Inp
2N4445	ETC	获取价格
2N4446	ETC	获取价格
2N4447	ETC	获取价格