Datasheet > 2N4403/E7

2N4403/E7

更新时间： 2024-01-20 16:38:39

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	28K
描述
TRANSISTOR \| BJT \| PNP \| 40V V(BR)CEO \| 600MA I(C) \| TO-226AA

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技术参数
数据手册

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2N4403/E7 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.82
Is Samacsys：	N	最大集电极电流 (IC)：	0.6 A
配置：	Single	最小直流电流增益 (hFE)：	20
最高工作温度：	150 °C	极性/信道类型：	PNP
最大功率耗散 (Abs)：	1.5 W	子类别：	Other Transistors
表面贴装：	NO	标称过渡频率 (fT)：	200 MHz
Base Number Matches：	1

2N4403/E7 数据手册

2N4403

New Product

Vishay Semiconductors

formerly General Semiconductor

Small Signal Transistor (PNP)

TO-226AA (TO-92)

0.142 (3.6)

0.181 (4.6)

Features

• PNP Silicon Epitaxial Planar Transistor for

switching and amplifier applications.

• As complementary type, the NPN transistor

2N4401 is recommended.

• On special request, this transistor is also

manufactured in the pin configuration TO-18.

• This transistor is also available in the SOT-23 case

with the type designation MMBT4403.

Mechanical Data

Case: TO-92 Plastic Package

Weight: approx. 0.18g

max.

0.022 (0.55)

0.098 (2.5)

Dimensions in inches

and (millimeters)

Packaging Codes/Options:

E6/Bulk – 5K per container, 20K/box

E7/4K per Ammo mag., 20K/box

Bottom

View

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

–V_CEO

–V_CBO

–V_EBO

–I_C

Value

Unit

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

5.0

600

T_A= 25°C

Derate above 25°C

625

5.0

mW/°C

Power Dissipation

P_tot

_C= 25°C

1.5

mW/°C

Derate above 25°C

Thermal Resistance Junction to Ambient Air

Thermal Resistance Junction to Case

Junction Temperature

R_ΘJA

R_ΘJC

T_j

200

83.3

°C/W

°C

150

Storage Temperature Range

T_S

–55 to +150

°C

Document Number 88118

08-May-02

www.vishay.com

12 3

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