Datasheet > 2N4401_10

2N4401_10

更新时间： 2022-09-16 12:39:49

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
7页	191K
描述
General Purpose Transistors

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2N4401_10 数据手册

2N4401

General Purpose

Transistors

NPN Silicon

http://onsemi.com

Features

• Pb−Free Packages are Available*

COLLECTOR

MAXIMUM RATINGS

Rating

Collector − Emitter Voltage

Collector − Base Voltage

Emitter − Base Voltage

Symbol

Value

Unit

Vdc

BASE

CEO

CBO

Vdc

EMITTER

EBO

6.0

Vdc

Collector Current − Continuous

600

mAdc

Total Device Dissipation

@ T = 25°C

625

5.0

Derate above 25°C

mW/°C

TO−92

CASE 29

STYLE 1

Total Device Dissipation

@ T = 25°C

1.5

mW/°C

Derate above 25°C

Operating and Storage Junction

Temperature Range

T , T

−55 to

+150

°C

stg

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

MARKING DIAGRAM

83.3

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

RecommendedOperating Conditions may affect device reliability.

4401

AYWW G

2N4401 = Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

downloadthe ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2010

Publication Order Number:

February, 2010 − Rev. 4

2N4401/D

12 3 4 5 6 7

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