Datasheet > 2N4401_S00Z

2N4401_S00Z

更新时间： 2024-01-27 16:57:14

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	85K
描述
Transistor

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中文翻译

获取价格

技术参数
数据手册
替代型号

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2N4401_S00Z 技术参数

是否无铅：	不含铅	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.55	最大集电极电流 (IC)：	0.6 A
配置：	Single	最小直流电流增益 (hFE)：	100
最高工作温度：	150 °C	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.35 W	子类别：	Other Transistors
表面贴装：	NO	标称过渡频率 (fT)：	250 MHz
Base Number Matches：	1

2N4401_S00Z 数据手册

2N4401

MMBT4401

TO-92

SOT-23

Mark: 2X

NPN General Pupose Amplifier

This device is designed for use as a medium power amplifier and

switch requiring collector currents up to 500 mA.

Absolute Maximum Ratings*

TA= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CBO

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

6.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

600

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA= 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

2N4401

*MMBT4401

P_D

Total Device Dissipation

Derate above 25 C

625

5.0

350

2.8

mW/ C

Thermal Resistance, Junction to Case

83.3

R_θ

C/W

Thermal Resistance, Junction to Ambient

200

357

R_θ

C/W

*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

2001 Fairchild Semiconductor Corporation

2N4401/MMBT4401, Rev A

12 3 4 5 6 7

中文翻译

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2N4401_S00Z 替代型号

型号	品牌	替代类型	描述	数据表
2N4401	CENTRAL	功能相似	Small Signal Transistors TO-92 Case (Continued)

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2N4401-18FLEADFREE	CENTRAL	获取价格	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92-18F,
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