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2N4400ZL1 PDF预览

2N4400ZL1

更新时间: 2024-02-24 12:37:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
25页 432K
描述
600mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, TO-226AA, 3 PIN

2N4400ZL1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.08其他特性:EUROPEAN PART NUMBER
最大集电极电流 (IC):0.6 A集电极-发射极最大电压:40 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):225
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
最大关闭时间(toff):255 ns最大开启时间(吨):35 ns
Base Number Matches:1

2N4400ZL1 数据手册

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SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
*Motorola Preferred Device  
COLLECTOR  
3
2
BASE  
1
EMITTER  
1
2
3
MAXIMUM RATINGS  
CASE 29–04, STYLE 1  
TO–92 (TO–226AA)  
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
Unit  
V
CEO  
V
CBO  
V
EBO  
40  
60  
Vdc  
Vdc  
6.0  
600  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watts  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
V
V
40  
60  
6.0  
Vdc  
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
C
B
CollectorBase Breakdown Voltage  
(I = 0.1 mAdc, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 0.1 mAdc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Base Cutoff Current  
(V = 35 Vdc, V  
I
0.1  
0.1  
µAdc  
µAdc  
BEV  
= 0.4 Vdc)  
= 0.4 Vdc)  
EB  
CE  
Collector Cutoff Current  
(V = 35 Vdc, V  
EB  
I
CEX  
CE  
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola Small–Signal Transistors, FETs and Diodes Device Data  
2–27  

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