是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.65 | Is Samacsys: | N |
JESD-609代码: | e3 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
端子面层: | MATTE TIN OVER NICKEL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N4232 | NJSEMI |
获取价格 |
Trans GP BJT NPN 60V 3A 3-Pin(2+Tab) TO-66 Sleeve | |
2N4232 | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO66 Metal Package | |
2N4232 | CENTRAL |
获取价格 |
Power Transistors | |
2N4232A | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, NPN, Silicon, TO-66, Metal, 2 Pin, METAL | |
2N4232A | MOSPEC |
获取价格 |
POWER TRANSISTORS(5A,75W) | |
2N4232A | BOCA |
获取价格 |
COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS | |
2N4232A | CENTRAL |
获取价格 |
Power Transistors | |
2N4232A | SEME-LAB |
获取价格 |
Bipolar NPN Device in a Hermetically sealed TO66 | |
2N4232A | NJSEMI |
获取价格 |
Trans GP BJT NPN 60V 10A 3-Pin(2+Tab) TO-66 Sleeve | |
2N4232ALEADFREE | CENTRAL |
获取价格 |
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-66, Metal, 2 |