Datasheet > 2N4150S

2N4150S

更新时间： 2024-11-20 22:45:03

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体晶体管开关
页数	文件大小	规格书
3页	69K
描述
NPN POWER SILICON TRANSISTOR

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中文翻译

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数据手册

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2N4150S 数据手册

TECHNICAL DATA

NPN POWER SILICON TRANSISTOR

Qualified per MIL-PRF-19500/ 394

Devices

Qualified Level

JAN

JANTX

JANTXV

2N4150

2N4150S

2N5237

2N5237S

2N5238

2N5238S

MAXIMUM RATINGS

2N4150 2N5237 2N5238

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Symbol 2N4150S2N5237S2N5238S Unit

120

150

170

Vdc

Adc

V_CEO

V_CBO

V_EBO

I_C

100

200

TO- 5*

2N4150, 2N5237,

2N5238

Total Power Dissipation @ T_A= +25⁰C⁽¹⁾

1.0

5.0

⁰C

P_T

@ T_C= +100⁰C⁽²⁾

Operating & Storage Junction Temp. Range

-65 to +200

T_J_,T

stg

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max.

Unit

Thermal Resistance, Junction-to-Case

0.020

qJC

qJA

⁰C/mW

TO-39*

(TO-205AD)

2N4150S, 2N5237S,

2N5238S

Junction-to-Ambient

0.175

1) Derate linearly @ 5.7 mW/⁰C for T_A> +25⁰C

2) Derate linearly @ 50 mW/⁰C for T_C> +25⁰C

*See appendix A for

package outline

ELECTRICAL CHARACTERISTICS (T_C= 25⁰C unless otherwise noted)

Characteristics

OFF CHARACTERISTICS

Emitter-Base Breakdown Voltage

I_E= 10 mAdc

Symbol

Min.

Max.

Unit

Vdc

7.0

V_(BR)

EBO

Collector-Emitter Breakdown Voltage

I_C= 0.1 Adc

120

170

2N4150, 2N4150S

2N5237, 2N5237S

2N5238, 2N5238S

V_(BR)

CEO

Vdc

Collector-Emitter Cutoff Current

V_EB= 0.5 Vdc, V_CE= 60 Vdc

V_EB= 0.5 Vdc, V_CE= 110 Vdc

V_EB= 0.5 Vdc, V_CE= 160 Vdc

mAdc

2N4150, 2N4150S

2N5237, 2N5237S

2N5238, 2N5238S

I_CEX

6 Lake Street, Lawrence, MA 01841

120101

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

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