5秒后页面跳转
2N3499 PDF预览

2N3499

更新时间: 2024-01-05 06:36:33
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体小信号双极晶体管开关
页数 文件大小 规格书
2页 63K
描述
NPN SILICON TRANSISTOR

2N3499 技术参数

生命周期:Contact Manufacturer零件包装代码:TO-5
包装说明:CYLINDRICAL, O-MBCY-W3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.82
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:100 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-5JESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:NPN
参考标准:MIL-19500表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管元件材料:SILICON最大关闭时间(toff):1150 ns
最大开启时间(吨):115 ns

2N3499 数据手册

 浏览型号2N3499的Datasheet PDF文件第2页 
TECHNICAL DATA  
NPN SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 366  
Devices  
Qualified Level  
JAN  
2N3498  
2N3499  
2N3500  
2N3501  
JANTX  
2N3498L  
2N3499L  
2N3500L  
2N3501L  
JANTXV  
JANS  
MAXIMUM RATINGS  
2N3498* 2N3500*  
Ratings  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Collector Current  
Symbol 2N3499* 2N3501*  
Unit  
Vdc  
100  
100  
6.0  
150  
150  
6.0  
VCEO  
VCBO  
VEBO  
IC  
Vdc  
Vdc  
TO-5*  
500  
300  
mAdc  
@ TA = 250C (1)  
@ TC = 250C (2)  
1.0  
5.0  
W
W
0C  
2N3498L, 2N3499L  
2N3500L, 2N3501L  
Total Power Dissipation  
PT  
Operating & Storage Junction Temp. Range  
-55 to +200  
TJ, T  
stg  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
Thermal Resistance:  
Junction-to-Case  
35  
R
qJC  
0C/W  
TO-39* (TO-205AD)  
2N3498, 2N3499  
Junction-to-Ambient  
175  
R
qJA  
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices  
1) Derate linearly 5.71 W/0C for TA > 250C  
2N3500, 2N3501  
2) Derate linearly 28.6 W/0C for TC > 250C  
*See appendix A for  
package outline  
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)  
Characteristics  
Symbol  
Min.  
Max.  
Unit  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 10 mAdc  
100  
150  
Vdc  
2N3498, 2N3499  
2N3500, 2N3501  
V(BR)  
CEO  
Collector-Base Cutoff Current  
VCB = 50 Vdc  
VCB = 75 Vdc  
VCB = 100 Vdc  
VCB = 150 Vdc  
50  
50  
10  
10  
hAdc  
hAdc  
mAdc  
mAdc  
2N3498, 2N3499  
2N3500, 2N3501  
2N3498, 2N3499  
2N3500, 2N3501  
ICBO  
Emitter-Base Cutoff Current  
VEB = 4.0 Vdc  
VEB = 6.0 Vdc  
25  
10  
hAdc  
mAdc  
IEBO  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  

2N3499 替代型号

型号 品牌 替代类型 描述 数据表
2N1893S MICROSEMI

功能相似

NPN LOW POWER SILICON TRANSISTOR

与2N3499相关器件

型号 品牌 获取价格 描述 数据表
2N3499_04 SEMICOA

获取价格

Silicon NPN Transistor
2N3499L SEMICOA

获取价格

Type 2N3499L Geometry 5620 Polarity NPN
2N3499L MICROSEMI

获取价格

NPN SILICON TRANSISTOR
2N3499L_04 SEMICOA

获取价格

Silicon NPN Transistor
2N3499LEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 P
2N35 NJSEMI

获取价格

GE NPN LO-PWR BJT
2N350 ETC

获取价格

TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3A I(C) | TO-3
2N3500 SEMICOA

获取价格

Type 2N3500 Geometry 5620 Polarity NPN
2N3500 BOCA

获取价格

GENERAL PURPOSE TRANSISTOR (NPN SILICON)
2N3500 MICROSEMI

获取价格

NPN SILICON TRANSISTOR