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2N3499L_04 PDF预览

2N3499L_04

更新时间: 2024-02-05 19:22:00
品牌 Logo 应用领域
SEMICOA 晶体晶体管
页数 文件大小 规格书
2页 88K
描述
Silicon NPN Transistor

2N3499L_04 数据手册

 浏览型号2N3499L_04的Datasheet PDF文件第2页 
2N3499L  
Silicon NPN Transistor  
Data Sheet  
Description  
Applications  
General purpose  
Low power  
NPN silicon transistor  
Semicoa Semiconductors offers:  
Screening and processing per MIL-PRF-19500 Appendix E  
JAN level (2N3499LJ)  
JANTX level (2N3499LJX)  
JANTXV level (2N3499LJV)  
QCI to the applicable level  
100% die visual inspection per MIL-STD-750 method  
2072 for JANTXV  
Radiation testing (total dose) upon request  
Features  
Hermetically sealed TO-5 metal can  
Also available in chip configuration  
Chip geometry 5620  
Reference document:  
MIL-PRF-19500/366  
Benefits  
Qualification Levels: JAN, JANTX, and  
Please contact Semicoa for special configurations  
JANTXV  
www.SEMICOA.com or (714) 979-1900  
Radiation testing available  
TC = 25°C unless otherwise specified  
Absolute Maximum Ratings  
Parameter  
Symbol  
Rating  
100  
Unit  
Volts  
Volts  
Collector-Emitter Voltage  
VCEO  
VCBO  
Collector-Base Voltage  
Emitter-Base Voltage  
100  
Volts  
mA  
VEBO  
IC  
6
Collector Current, Continuous  
500  
Power Dissipation, TA = 25OC  
1
5.71  
W
mW/°C  
°C/W  
PT  
Derate linearly above 25OC  
Thermal Resistance  
175  
RθJA  
TJ  
°C  
°C  
Operating Junction Temperature  
Storage Temperature  
-65 to +200  
-65 to +200  
TSTG  
Semicoa  
Copyright© 2004  
Rev. H.2  
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541  
Page 1 of 2  
www.SEMICOA.com  

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