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2N3417 PDF预览

2N3417

更新时间: 2024-11-08 22:35:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
2页 27K
描述
NPN General Purpose Amplifier

2N3417 数据手册

 浏览型号2N3417的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
2N3416  
2N3417  
TO-92  
B
C
E
NPN General Purpose Amplifier  
This device is designed for use as general purpose amplifiers  
and switches requiring collector currents to 300 mA. Sourced  
from Process 10. See PN100A for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
50  
50  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
500  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N3416 / 2N3417  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
200  
°C/W  
3416-3417, Rev B  
1997 Fairchild Semiconductor Corporation  

2N3417 替代型号

型号 品牌 替代类型 描述 数据表
NTE192A NTE

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