是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | CYLINDRICAL, O-MBCY-W3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.51 |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.05 A |
基于收集器的最大容量: | 5 pF | 集电极-发射极最大电压: | 45 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 400 |
JEDEC-95代码: | TO-18 | JESD-30 代码: | O-MBCY-W3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 200 °C |
最低工作温度: | -65 °C | 封装主体材料: | METAL |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
功耗环境最大值: | 0.35 W | 最大功率耗散 (Abs): | 0.35 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 60 MHz |
VCEsat-Max: | 0.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N3246LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-18, | |
2N3246TIN/LEAD | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, | |
2N3248 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N3248LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 12V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 | |
2N3249 | CENTRAL |
获取价格 |
Small Signal Transistors | |
2N3249LEADFREE | CENTRAL |
获取价格 |
Small Signal Bipolar Transistor, 12V V(BR)CEO, 1-Element, PNP, Silicon, TO-18 | |
2N3250 | BOCA |
获取价格 |
GENERAL PURPOSE TRANSISTOR (PNP SILICON) | |
2N3250 | SEME-LAB |
获取价格 |
Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. | |
2N3250 | NJSEMI |
获取价格 |
Trans GP BJT PNP 40V 0.2A 3-Pin TO-18 Box | |
2N3250 | CENTRAL |
获取价格 |
40V,200mA,360mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/ |