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2N2484UB PDF预览

2N2484UB

更新时间: 2024-01-05 02:30:46
品牌 Logo 应用领域
SEMICOA 晶体晶体管
页数 文件大小 规格书
2页 237K
描述
Silicon NPN Transistor

2N2484UB 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2N2484UB 数据手册

 浏览型号2N2484UB的Datasheet PDF文件第1页 
2N2484UB  
Silicon NPN Transistor  
Data Sheet  
ELECTRICAL CHARACTERISTICS  
characteristics specified at TA = 25°C  
Off Characteristics  
Parameter  
Collector-Emitter Breakdown Voltage  
Symbol  
Test Conditions  
Min  
60  
Typ  
Max  
Units  
Volts  
V(BR)CEO IC = 10 mA  
VCB = 60 Volts  
ICBO1  
ICBO2  
ICBO3  
ICEO  
ICES  
10  
5
µA  
nA  
µA  
nA  
nA  
VCB = 45 Volts  
Collector-Base Cutoff Current  
10  
VCB = 45 Volts, TA = 150°C  
VCE = 5 Volts  
VCE = 45 Volts  
Collector-Emitter Cutoff Current  
Collector-Emitter Cutoff Current  
2
5
IEBO1  
IEBO2  
V
EB = 6 Volts  
10  
2
µA  
Emitter-Base Cutoff Current  
VEB = 5 Volts  
nA  
Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%  
On Characteristics  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Units  
IC = 1 µA, VCE = 5 Volts  
IC = 10 µA, VCE = 5 Volts  
IC = 100 µA, VCE = 5 Volts  
IC = 500 µA, VCE = 5 Volts  
IC = 1 mA, VCE = 5 Volts  
IC = 10 mA, VCE = 5 Volts  
IC = 10 µA, VCE = 5 Volts  
TA = -55°C  
hFE1  
hFE2  
hFE3  
hFE4  
hFE5  
hFE6  
hFE7  
45  
200  
225  
250  
250  
225  
35  
500  
675  
800  
800  
800  
DC Current Gain  
Base-Emitter Voltage  
VBE  
VCEsat1  
0.5  
0.7  
0.3  
Volts  
Volts  
V
CE = 5 Volts, 100 µA  
Collector-Emitter Saturation Voltage  
Dynamic Characteristics  
Parameter  
IC = 1 mA, IB = 100 µA  
Symbol  
Test Conditions  
CE = 5 Volts, IC = 50 µA,  
Min  
Typ  
Max  
Units  
V
|hFE|1  
3
Magnitude – Common Emitter, Short  
Circuit Forward Current Transfer Ratio  
f = 5 MHz  
CE = 5 Volts, IC = 500 µA,  
f = 30 MHz  
CE = 5 Volts, IC = 1 mA,  
f = 1 kHz  
CB = 5 Volts, IE = 0 mA,  
V
|hFE|2  
hFE  
2
7
900  
5
Small Signal Short Circuit Forward  
Current Transfer Ratio  
V
250  
V
Open Circuit Output Capacitance  
COBO  
CIBO  
pF  
pF  
100 kHZ < f < 1 MHz  
VEB = 0.5 Volts, IC = 0 mA,  
100 kHZ < f < 1 MHz  
VCE = 5 Volts, IC = 10 µA,  
Rg = 10 kΩ  
Open Circuit Input Capacitance  
6
Noise Figure  
NF1  
NF2  
NF3  
7.5  
3
dB  
f = 100 Hz  
f = 1 kHz  
2
f = 10 kHz  
VCE = 5 Volts, IC = 10 µA,  
Rg = 10 k,  
Noise Figure (wideband)  
NF4  
3
dB  
10Hz < Noise BW <15.7kHz  
Short Circuit Input Impedance  
hie  
hoe  
hre  
24  
40  
kΩ  
µmhos  
Open Circuit Output Admittance  
Open Circuit Rev Volt Transfer Ratio  
VCB = 5V, IC = 1mA, f = 1kHz  
3.5  
8x10-4  
Semicoa Semiconductors, Inc.  
Copyright2002  
Rev. F  
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541  
Page 2 of 2  
www.SEMICOA.com  

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