生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.82 |
最大集电极电流 (IC): | 5 A | 配置: | Single |
最小直流电流增益 (hFE): | 100 | 最高工作温度: | 100 °C |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 12 W |
子类别: | Other Transistors | 表面贴装: | NO |
标称过渡频率 (fT): | 3 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2148 | NJSEMI |
获取价格 |
Trans GP BJT NPN 100V 2A 4-Pin TO-111 | |
2N2150 | MICROSEMI |
获取价格 |
NPN POWER SILICON TRANSISTOR | |
2N2150 | NJSEMI |
获取价格 |
NPN SWITCHING TRANSISTORS | |
2N2150 | APITECH |
获取价格 |
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, 3 | |
2N2150E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, | |
2N2151 | NJSEMI |
获取价格 |
NPN SWITCHING TRANSISTORS | |
2N2151 | MICROSEMI |
获取价格 |
5 Amp, 100V, Planar, NPN Power Transistors JAN, JANTX | |
2N2151E3 | MICROSEMI |
获取价格 |
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, | |
2N2152 | DIGITRON |
获取价格 |
TRANSISTOR,BJT,PNP,30V V(BR)CEO,30A I(C),TO-36 | |
2N2152A | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30A I(C) | TO-67 |