Datasheet > 2MBI800XNE120-50

2MBI800XNE120-50

更新时间： 2024-05-07 20:39:25

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
10页	473K
描述
2-Pack(2 in 1) M285

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数据手册

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2MBI800XNE120-50 数据手册

2MBI800XNE120-50

IGBT Modules

[Inverter]

Collector current vs. Collector-Emitter voltage (typ.)

T _vj= 25°C / chip

Collector current vs. Collector-Emitter voltage (typ.)

T _Vj= 175^oC / chip

1600

15V

V_GE= 20V

12V

V_GE= 20V

1400

1200

1000

800

600

400

200

1400

12V

1200

1000

800

10V

600

10V

400

200

Collector-Emitter voltage: V _CE[V]

[Inverter]

Collector current vs. Collector-Emitter voltage (typ.)

[Inverter]

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

V_GE= 15V / chip

1600

T _vj= 25^oC / chip

T_vj= 25°C

1400

1200

1000

800

600

400

200

T_vj= 175°C

T_vj= 125°C

T_vj= 150°C

I_C= 1600A

I_C= 800A

I_C= 400A

0.5

1.5

2.5

3.5

Collector-Emitter voltage: V _CE[V]

Gate - Emitter voltage: V _GE[V]

[Inverter]

Capacitance vs. Collector-Emitter Voltage (typ.)

V _GE= 0V, f = 1MHz, T _vj= 25°C

[Inverter]

Dynamic gate charge (typ.)

V _CC

= 600V, I_C= 800A, T _vj= 25°C

1000.0

800

600

400

200

V_CE

C_ies

100.0

10.0

1.0

V_GE

C_oes

-200

-400

-600

-800

-5

-10

-15

-20

C_res

0.1

-4

-3

-2

-1

Collector - Emitter voltage: V _CE[V]

Gate charge: Q _G[μC]

FM5F9078a

2022/03

1 2 3 456 7 8...10

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