2MBI800XNE120-50
IGBT Modules
■ Electrical characteristics (at T vj= 25°C unless otherwise specified)
Characteristics
Items
Symbols
Conditions
T vj= 25°C
Units
min.
typ.
41.7
70.2
81.1
90.4
77.6
92.5
94.9
max.
600V
=
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V CC
T vj=125°C
T vj=150°C
T vj=175°C
T vj= 25°C
T vj=125°C
T vj=150°C
IC, IF = 800A
E on
+15/-15 V
= ±0.5Ω
V GE
=
R G
L S
35 nH
=
Switching loss
(per pulse)
E off
mJ
T vj=175°C
T vj= 25°C
T vj=125°C
T vj=150°C
T vj=175°C
-
100.5
31.0
52.9
60.2
67.8
5000
495
-
-
-
-
-
-
-
-
E rr
-
-
-
T =
T =
25°C
Resistance
B value
R
B
Ω
100°C
465
520
T =
25/ 50°C
3305
3375
3450
K
NOTICE:
The external gate resistance (R G) shown above is one of our recommended value for the purpose of
minimum switching loss. However the optimum R G depends on circuit configuration and/or environment.
We recommend that the R G has to be carefully chosen based on consideration if IGBT module
matches design criteria, for example, switching loss, EMC/EMI, spike voltage, surge current and
no unexpected oscillation and so on.
■Thermal resistance characteristics
Characteristics
typ.
Items
Symbols
Conditions
Inverter IGBT
Units
min.
-
max.
0.037
-
Thermal resistance junction
to case(1 device)
R th(j-c)
-
-
0.044
Inverter FWD
°C/W
Thermal resistance case to
heatsink(1 IGBT+1 FWD)(*1)
R th(c-s)
with 1 W/(m·°C) thermal grease
-
0.0167
-
(*1) This is the value which is defined mounting on the additional hestsink with thermal grease.
FM5F9078a
2022/03
4