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2MBI800XNE120-50 PDF预览

2MBI800XNE120-50

更新时间: 2024-05-07 20:39:25
品牌 Logo 应用领域
富士电机 - FUJI /
页数 文件大小 规格书
10页 473K
描述
2-Pack(2 in 1) M285

2MBI800XNE120-50 数据手册

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2MBI800XNE120-50  
IGBT Modules  
Electrical characteristics (at T vj= 25°C unless otherwise specified)  
Characteristics  
Items  
Symbols  
Conditions  
T vj= 25°C  
Units  
min.  
typ.  
41.7  
70.2  
81.1  
90.4  
77.6  
92.5  
94.9  
max.  
600V  
=
-
-
-
-
-
-
-
-
-
-
-
-
-
-
V CC  
T vj=125°C  
T vj=150°C  
T vj=175°C  
T vj= 25°C  
T vj=125°C  
T vj=150°C  
IC, IF = 800A  
E on  
+15/-15 V  
= ±0.5Ω  
V GE  
=
R G  
L S  
35 nH  
=
Switching loss  
(per pulse)  
E off  
mJ  
T vj=175°C  
T vj= 25°C  
T vj=125°C  
T vj=150°C  
T vj=175°C  
-
100.5  
31.0  
52.9  
60.2  
67.8  
5000  
495  
-
-
-
-
-
-
-
-
E rr  
-
-
-
T =  
T =  
25°C  
Resistance  
B value  
R
B
Ω
100°C  
465  
520  
T =  
25/ 50°C  
3305  
3375  
3450  
K
NOTICE:  
The external gate resistance (R G) shown above is one of our recommended value for the purpose of  
minimum switching loss. However the optimum R G depends on circuit configuration and/or environment.  
We recommend that the R G has to be carefully chosen based on consideration if IGBT module  
matches design criteria, for example, switching loss, EMC/EMI, spike voltage, surge current and  
no unexpected oscillation and so on.  
Thermal resistance characteristics  
Characteristics  
typ.  
Items  
Symbols  
Conditions  
Inverter IGBT  
Units  
min.  
-
max.  
0.037  
-
Thermal resistance junction  
to case(1 device)  
R th(j-c)  
-
-
0.044  
Inverter FWD  
°C/W  
Thermal resistance case to  
heatsink(1 IGBT+1 FWD)(*1)  
R th(c-s)  
with 1 W/(m·°C) thermal grease  
-
0.0167  
-
(*1) This is the value which is defined mounting on the additional hestsink with thermal grease.  
FM5F9078a  
2022/03  
4

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