Datasheet > 2MBI800XNE120-50

2MBI800XNE120-50

更新时间： 2024-05-07 20:39:25

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
10页	473K
描述
2-Pack(2 in 1) M285

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数据手册

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2MBI800XNE120-50 数据手册

2MBI800XNE120-50

IGBT Modules

[Inverter]

Switching time vs. Gate resistance (typ.)

Switching time vs. Collector current (typ.)

V _CC

R _G

V _GE=

+15/-15 V, T _vj= 25°C

600V,

±0.5Ω

V _CC

600V, I_C= 800A, V _GE

T _vj= 25°C

+15/-15 V,

10000

1000

100

10000

td(on)

t_d(on)

td(off)

td(on)

d(on)

t_r

td(off)

t_d(off)

t_f

t_d(off)

t_f

1000

100

200 400 600 800 1000 1200 1400 1600

100

Collector current: I _C[A]

Gate resistance: R _G[Ω]

[Inverter]

Switching time vs. Collector current (typ.)

[Inverter]

Switching time vs. Gate resistance (typ.)

V _CC

R _G

V _GE=

+15/-15 V, T _vj= 175°C

600V,

±0.5Ω

V _CC= 600V, I_C= 800A, V _GE= +15/-15 V, T _vj= 175°C

10000

td(on)

d(on)

_dt₍d_on(₎on)

t_rtr

t_r

td(off)

t_d(off)

t_f

td(off)

t_d(off)

t_f

1000

100

1000

100

200 400 600 800 1000 1200 1400 1600

100

Collector current: I _C[A]

Gate resistance: R _G[Ω]

[Inverter]

Reverse bias safe operating area (max.)

V _GE

1800

R _G=

±0.5Ω

+15/-15 V,

T _vj= 175°C

1600

1400

1200

1000

800

600

400

200

RBSOA

(Repetitive pulse)

Notice)

Switching characteristics of

V_CEis defined between

Sense C and Sense E1 for

Upper leg and Sense E1

and Sense E2 for Lower leg.

200 400 600 800 1000 1200 1400

Collector - Emitter voltage: V _CE[V]

FM5F9078a

2022/03

1...4 5 678 9 10

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