Datasheet > 2MBI800XNE120-50

2MBI800XNE120-50

更新时间： 2024-05-07 20:39:25

品牌	Logo	应用领域
富士电机 - FUJI		/
页数	文件大小	规格书
10页	473K
描述
2-Pack(2 in 1) M285

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2MBI800XNE120-50 数据手册

2MBI800XNE120-50

IGBT Modules

■ Electrical characteristics (at T _vj= 25°C unless otherwise specified)

Characteristics

typ.

Items

Symbols

I _CES

Conditions

Units

min.

max.

Zero gate voltage

collector current

Gate-Emitter

V _GE

V _CE

150

μA

1200V

I _GES

V _CE=0V, V _GE= 20V

300

7.0

leakage current

Gate-Emitter

20V

V _CE

I _C

V _GE(th)

6.0

6.5

threshold voltage

800mA

V _CE(sat)

T _vj=25°C

2.45

2.90

(terminal)

T _vj=25°C

1.45

1.80

1.90

1.95

1.17

1.90

V _GE= 15V

800A

Collector-Emitter

saturation voltage

T _vj=125°C

T _vj=150°C

T _vj=175°C

I _C=

V _CE(sat)

(chip)

r _g

Internal gate

Capacitance

C _ies

C _oes

C _res

V _CE=10V, V _GE=0V, f=1MHz

2.9

0.76

600V,

800A

V _CC

V _GE

I _C

Q _G

Gate charge

5.5

μC

-15 → +15V

V _GE= 0V

800A

V _F

T _vj=25°C

2.60

3.05

(terminal)

I _F=

T _vj= 25°C

T _vj=125°C

T _vj=150°C

1.60

1.65

1.60

2.05

Forward voltage

V _F

(chip)

T _vj=175°C

T _vj= 25°C

T _vj=125°C

1.60

0.47

0.48

0.49

0.51

0.10

0.11

0.12

0.45

600V

V _CC

I _C, I _F=

V _GE

800A

t _d(on)

T =150°C

+15/-15 V

±0.5Ω

T _vj=175°C

T _vj= 25°C

T _vj=125°C

T _vj=150°C

T _vj=175°C

T _vj= 25°C

R _G

L _S

35 nH

t _r

Switching time (*1)

μs

T _vj=125°C

T _vj=150°C

T _vj=175°C

T _vj= 25°C

T _vj=125°C

T _vj=150°C

T _vj=175°C

T _vj= 25°C

T _vj=125°C

T _vj=150°C

T _vj=175°C

0.49

0.50

0.52

0.08

0.10

0.11

0.19

0.29

0.32

0.37

t _d(off)

t _f

t _rr

Reverse recovery tim

Turn on time (t _on) = t _d(on)+ t _r, Turn off time (t _off) = t _d(off)+ t _f

(*1)

FM5F9078a

2022/03

1 234 5 6 7...10

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