Datasheet > 2KC1106

2KC1106

更新时间： 2024-11-27 18:09:31

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
5页	251K
描述
NPN Transistor

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数据手册

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2KC1106 数据手册

SMD Type

Transistors

NPN Silicon RF Transistor

2KC1106

Unit:mm

SOT-343

Ƶ Features

2.0±0.2

1.25±0.1

ƽ For high gain low noise amplifiers

ƽ For oscillators up to 10 GHz

ƽ Noise figure F = 1.05 dB at 1.8 GHz

outstanding Gms = 20 dB at 1.8 GHz

0~0.1

2.1±0.1

1.30(Typ)

ƽ Transition frequency f

T = 25 GHz

0.23 (max)

0.13 (min)

ƽ Gold metalization for high reliability

0.45(max)

0.1(max)

0.35±0.05

0.60±0.1

0.15(max)

detail X

1.15(Typ)

1 Base

3 Collector

2 Emitter 4 Emitter

Ƶ Absolute Maximum Ratings (T

= 25 °C, unless otherwise specified)

Symbol

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current

Rating

Unit

CBO

CEO

EBO

4.5

1.5

Base current

Total Power Dissipation) T

İ 107ć

tot

160

270

Junction - soldering point ^*1

RɽJS

ć/W

Junction Temperature

150

Storage Temperature range

Tstg

-65 to 150

*1 TS is measured on the collector lead at thsoldering point to the pcb.

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