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2KC1106 PDF预览

2KC1106

更新时间: 2024-10-15 18:09:31
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
5页 251K
描述
NPN Transistor

2KC1106 数据手册

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SMD Type  
Transistors  
NPN Silicon RF Transistor  
2KC1106  
Unit:mm  
SOT-343  
Ƶ Features  
2.0±0.2  
1.25±0.1  
A
X
ƽ For high gain low noise amplifiers  
ƽ For oscillators up to 10 GHz  
ƽ Noise figure F = 1.05 dB at 1.8 GHz  
outstanding Gms = 20 dB at 1.8 GHz  
0~0.1  
2.1±0.1  
1.30(Typ)  
ƽ Transition frequency f  
T = 25 GHz  
4
3
0.23 (max)  
0.13 (min)  
ƽ Gold metalization for high reliability  
1
2
0.45(max)  
0.1(max)  
0.35±0.05  
0.60±0.1  
0.15(max)  
detail X  
1.15(Typ)  
1 Base  
3 Collector  
2 Emitter 4 Emitter  
Ƶ Absolute Maximum Ratings (T  
A
= 25 °C, unless otherwise specified)  
Symbol  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Collector Current  
Rating  
Unit  
V
V
V
V
CBO  
CEO  
EBO  
15  
4.5  
1.5  
35  
3
IC  
mA  
Base current  
IB  
Total Power Dissipation) T  
S
İ 107ć  
P
tot  
160  
270  
mW  
Junction - soldering point *1  
RɽJS  
ć/W  
Junction Temperature  
T
J
150  
ć
Storage Temperature range  
Tstg  
-65 to 150  
*1 TS is measured on the collector lead at thsoldering point to the pcb.  
1
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