Datasheet > 2KD3006

2KD3006

更新时间： 2024-10-15 18:09:15

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	206K
描述
NPN Transistors

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中文翻译

获取价格

数据手册

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2KD3006 数据手册

SMD Type

Transistors

NPN Transistors

2KD3006

1.70 0.1

Features

High collector to emitter voltage: VCEO 120V.

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

VCBO

V^CEO

V^EBO

I^C

Rating

Unit

120

Collector current

0.7

Collector current (pulse) *

Collector power dissipation

Junction temperature

IC (pu)

1.2

T^j

150

Storage temperature

Tstg

-55 to +150

*. PW 10ms,duty cycle 50%

Electrical Characteristics Ta = 25

Parameter

Symbol

Test Conditions

Ic= 100 ȝAˈ I = 0

Ic=1 mAˈ I = 0

= 100Aˈ I = 0

CB= 120 V , I = 0

^EB= 5V , I =0

Min

120

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

0.1

Collector-emitter saturation voltage *

Base - emitter saturation voltage *

Base - emitter voltage *

CE(sat)

BE(sat)

=500 mA, I

=50mA

0.6

C=500 mA, I

1.5

^CE= 10V, I

= 10mA

0.55

0.68

CE= 1V, I

= 5mA

200

DC current gain

hFE

C= 100mA

135

270

Collector output capacitance

Transition frequency

CB= 10V, I

^CE= 10V, I

E=0,f=1MHz

C= 10mA

MHz

*. PW 350us,duty cycle 2%

Ƶ 0DUNLQJ

0DUNLQJ

KO2*

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中文翻译

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