Datasheet > 2KD3008

2KD3008

更新时间： 2024-10-15 18:09:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
3页	180K
描述
NPN Silicon RF Transistor

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中文翻译

获取价格

数据手册

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2KD3008 数据手册

SMD Type

Transistors

NPN Transistors

2KD3008

1.70 0.1

Ƶ Features

ƽ Low noise and high gain

ƽ High power gain

ƽ Large P^tot

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction to Ambient Resistance

Junction Temperature

100

1.2

th (j-a)

62.5

150

ć/W

Storage Temperature Range

stg

-55 to 150

Ƶ Electrical Characteristics Ta = 25ć

Parameter

Symbol

Test Conditions

Ic= 100 ȝAˈ I = 0

Ic= 1 mAˈ I = 0

= 100Aˈ I = 0

CB= 20V , I = 0

EB= 3V , I =0

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

CBO

EBO

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain (Note.1)

Insertion Power Gain

CE(sat)

BE(sat)

=50 mA, I

=5mA

0.4

1.2

250

C=50 mA, I

B=5mA

hFE

^CE= 10V, I

CE = 10V, I

= 20mA

125

|S^21e

= 20mA, f= 1GHz

= 7mA, f= 1GHz

= 40mA, f= 1GHz

1.1

1.8

Noise Figure

Reverse Transfer Capacitance

Transition frequency

Cre

^CB= 10V, I

^CE= 10V, I

= 0,f=1MHz

= 20mA

6.5

GHz

Note.1: Pulse measurement: PW İ 350 us, Duty Cycle İ 2%

Ƶ 0DUNLQJ

0DUNLQJ

KOR*

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中文翻译

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