Datasheet > 2EDL8033G3C

2EDL8033G3C

更新时间： 2024-03-03 10:11:30

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
32页	1536K
描述
The 2EDL8033G3C is designed to drive both high-side and low-side MOSFETs in a half-bridge configur

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2EDL8033G3C 数据手册

EiceDRIVER^™2EDL803X

120 V boot, 3 A / 4 A, junction-isolated high-side and low-side gate driver IC

2 General product characteristics

Table 4

(continued)

The following operaꢀing condiꢀions musꢀ noꢀ be exceeded in order ꢀo ensure correcꢀ operaꢀion and reliabiliꢀy of ꢀhe

device. All volꢀage parameꢀers are referenced ꢀo V_SSunless oꢀherwise specified.

Parameter

Symbol

Values

Unit

Note or condition

Min. Typ. Max.

EN inpuꢀ

volꢀage

V_EN

–

V_DD+0. V

Ouꢀpuꢀ volꢀage V_LO

on LO

Ouꢀpuꢀ volꢀage V_HO-HS

on HO

Referenced ꢀo V_HS

HS slew raꢀe

HS_dV/dT

T_J

–

V/ns

°C

Operaꢀing

juncꢀion

ꢀemperaꢀure

-40

125

2.4

Thermal mechanical characteristics

Table 5

Thermal resistance

Symbol

Description

VDSON-8

VSON-10

VDSON-10

UNIT

Conditions

R_ꢀhJC

Juncꢀion-ꢀo-

case ꢀhermal

resisꢀance

4.6

4.7

4.6

^oC/W

Boꢀꢀom

R_ꢀhJC

Juncꢀion-ꢀo-

case ꢀhermal

resisꢀance

39.3

61.4

38.4

57.5

^oC/W

Top

R_ꢀhJA

juncꢀion-ꢀo-

ambienꢀ

Device

soldered on

PCB ¹⁾

1) Device on 76.2 mm x 114.3 mm x 1.5 mm board (JEDEC 2s2p) wiꢀh 6 cm²copper area for drain connecꢀion. PCB

verꢀical in sꢀill air.

2.5

Electrical characteristics

Table 6

Unless oꢀherwise specified: V_DD= V_HB= 12 V, V_HS= V_SS= 0 V. The minimum and maximum limiꢀs are valid over ꢀhe full

operaꢀing ꢀemperaꢀure range and are ensured by characꢀerizaꢀion and sꢀaꢀisꢀical correlaꢀion. Typical values are ꢀesꢀed

aꢀ T_C= 25ºC.

Parameter

Symbol

Values

Unit

Note or condition

Min. Typ. Max.

Supply current

VDD quiescenꢀ I_VDD

currenꢀ

–

290

380

V_LIand V_HI= 0 V

(table continues...)

Daꢀasheeꢀ

Rev. 2.1

2023-04-04

1...5 6 789 10 11...32

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