5秒后页面跳转
2EDL8033G3C PDF预览

2EDL8033G3C

更新时间: 2024-03-03 10:11:30
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
32页 1536K
描述
The 2EDL8033G3C is designed to drive both high-side and low-side MOSFETs in a half-bridge configur

2EDL8033G3C 数据手册

 浏览型号2EDL8033G3C的Datasheet PDF文件第4页浏览型号2EDL8033G3C的Datasheet PDF文件第5页浏览型号2EDL8033G3C的Datasheet PDF文件第6页浏览型号2EDL8033G3C的Datasheet PDF文件第8页浏览型号2EDL8033G3C的Datasheet PDF文件第9页浏览型号2EDL8033G3C的Datasheet PDF文件第10页 
EiceDRIVER2EDL803X  
120 V boot, 3 A / 4 A, junction-isolated high-side and low-side gate driver IC  
2 General product characteristics  
Table 3  
(continued)  
Sꢀresses above ꢀhe values lisꢀed under "Absoluꢀe maximum raꢀings" may cause permanenꢀ damage ꢀo ꢀhe device. This  
is a sꢀress raꢀing only and funcꢀional operaꢀion of ꢀhe device aꢀ ꢀhese or any oꢀher condiꢀions above ꢀhose indicaꢀed  
in ꢀhe operaꢀional secꢀions of ꢀhis specificaꢀion is noꢀ implied. Exposure ꢀo absoluꢀe maximum raꢀing condiꢀions may  
aꢁecꢀ device reliabiliꢀy. All volꢀage parameꢀers are referenced ꢀo VSS unless oꢀherwise specified.  
Parameter  
Symbol  
Values  
Unit  
Note or condition  
Min. Typ. Max.  
Operaꢀing  
juncꢀion  
ꢀemperaꢀure  
TJ  
-40  
150  
°C  
Sꢀorage  
ꢀemperaꢀure  
TS  
-55  
150  
ºC  
1)  
2)  
3)  
Verified wiꢀh VDD supplied wiꢀhin ꢀhe recommended operaꢀing volꢀage range.  
Noꢀ subjecꢀ ꢀo producꢀion ꢀesꢀ. Verified by design/characꢀerizaꢀion.  
For < 500 ns pulses.  
2.2  
ESD ratings  
Description  
Symbol  
ESDHBM  
ESDCDM  
Value  
2000  
1000  
Unit  
Human Body Model sensiꢀiviꢀy as per ANSI/ESDA/JEDEC JS-001  
Charged Device Model sensiꢀiviꢀy as per ANSI/ESDA/JEDEC JS-002  
V
V
2.3  
Recommended operating conditions  
Table 4  
The following operaꢀing condiꢀions musꢀ noꢀ be exceeded in order ꢀo ensure correcꢀ operaꢀion and reliabiliꢀy of ꢀhe  
device. All volꢀage parameꢀers are referenced ꢀo VSS unless oꢀherwise specified.  
Parameter  
Symbol  
Values  
Unit  
Note or condition  
Min. Typ. Max.  
Supply inpuꢀ  
volꢀage  
VDD  
8
12  
12  
17  
V
V
V
High side  
supply volꢀage  
VHB-HS  
8
17  
Referenced ꢀo VHS.  
High side  
booꢀsꢀrap  
volꢀage  
VHB  
VHS  
8
+
VHS +  
17  
Phase volꢀage  
VHS  
VHS  
-1  
100  
100  
V
V
Phase volꢀage  
(repeꢀiꢀive  
pulse)  
-12  
< 100 ns  
HI and LI Inpuꢀ VHI, VLI  
volꢀage  
0
VDD+0. V  
3
(table continues...)  
Daꢀasheeꢀ  
7
Rev. 2.1  
2023-04-04  

与2EDL8033G3C相关器件

型号 品牌 描述 获取价格 数据表
2EDL8033G4B INFINEON The 2EDL8033G4B is designed to drive both high-side and low-side MOSFETs in a half-bridge

获取价格

2EDL8033G4C INFINEON The 2EDL8033G4C is designed to drive both high-side and low-side MOSFETs in a half-bridge

获取价格

2EDL8034G3C INFINEON The 2EDL8034G3C is designed to drive both high-side and low-side MOSFETs in a half-bridge

获取价格

2EDL8034G4B INFINEON The 2EDL8034G4B is designed to drive both high-side and low-side MOSFETs in a half-bridge

获取价格

2EDL8034G4C INFINEON The 2EDL8034G4C is designed to drive both high-side and low-side MOSFETs in a half-bridge

获取价格

2EDL8123G3C INFINEON 2EDL8123G3C is a high-side and low-side drive

获取价格