Datasheet > 2ED2103S06F

2ED2103S06F

更新时间： 2023-09-03 20:32:05

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
25页	1151K
描述
650 V high speed half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs.

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2ED2103S06F 数据手册

2ED2103S06F

650 V high-side and low-side driver with integrated bootstrap diode

Pin configuration and functionality

3.1

Pin configuration

VCC

HIN

/LIN

COM

8-Lead DSO-8 (150 mil)

2ED2103S06F

Figure 3

2ED2103S06F pin assignments (top view)

3.2

Pin functionality

Table 2

Symbol

Description

Logic input for high side gate driver output (HO), in phase with HO

Logic input for low side gate driver output (LO), out of phase with LO

Low-side gate drive return

HIN

/LIN

COM

Low-side driver output

VCC

Low-side and logic supply voltage

High voltage floating supply return

High-side driver output

High-side gate drive floating supply

Datasheet

www.infineon.com/soi

5 of 25

V 2.3

2020-12-07

1 2 3 456 7 8...25

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