Datasheet > 2ED2103S06F

2ED2103S06F

更新时间： 2023-09-03 20:32:05

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
25页	1151K
描述
650 V high speed half-bridge gate driver with typical 0.29 A source and 0.7 A sink currents in DSO-8 package for driving power MOSFETs and IGBTs.

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2ED2103S06F 数据手册

2ED2103S06F

650V half bridge driver with integrated bootstrap diode

Description

The 2ED2103S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low

side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise

immunity with capability to maintain operational logic at negative voltages of up to - 11 V_DCon VS pin (V_CC= 15 V)

on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic

latch up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS

or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for

minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET, SiC

MOSFET or IGBT in the high side configuration, which operate up to 650 V.

Up to 650V

Refer to lead assignments for

VCC

HIN

LIN

correct pin configuration. This

diagram shows electrical

connections only. Please refer to

our application notes and design

tips for proper circuit board

layout.

LIN

TO LOAD

COM

*Bootstrap diode is monolithically integrated

Figure 1

Typical application block diagram

Summary of feature comparison of the 2ED210x family:

Table 1

Drive

current

source /

sink

Cross

conduction

prevention

logic

Ground

pins

Part No.

Package

Input logic

Deadtime

t_ON/ t_OFF

+ 0.29 A

/ - 0.7 A

+ 0.29 A

/ - 0.7 A

+ 0.29 A

/ - 0.7 A

2ED2101S06F

2ED2103S06F

2ED2104S06F

DSO – 8

HIN, LIN

IN, SD

None

COM

Yes

Internal 520 ns

90 ns

Datasheet

www.infineon.com/soi

2 of 25

V 2.3

2020-12-07

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