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2DEA-2-Q24R PDF预览

2DEA-2-Q24R

更新时间： 2024-11-14 02:56:39
品牌 Logo 应用领域
伯恩斯 - BOURNS 二极管
页数 文件大小 规格书
3页 263K
描述
Integrated ESD Protection Diode Array

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中文翻译

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2DEA-2-Q24R 数据手册

 浏览型号2DEA-2-Q24R的Datasheet PDF文件第2页浏览型号2DEA-2-Q24R的Datasheet PDF文件第3页 
Features  
■ Lead free  
■ Incorporates 40 bi-directional PN  
junction diodes  
D
2
■ RoHS compliant*  
E
4
A
Q
0
0
■ Small form factor replaces 20 SOT23  
packages  
2
■ Supports 15 KV IEC 61000-4-2 ESD  
equipment specification*  
0
0
3
6
■ Single device protects as many as 20 lines  
on exposed pins, communications ports  
Thin Film on Silicon 2DEA Integrated ESD Protection Diode Array  
General Information  
Package Schematic  
The Model 2DEA Series is well-suited for space constrained  
designs where the requirements of international ESD standard  
specification IEC 61000-4-2 must be met.  
VDD  
VSS  
24 23 22 21 20 19 18 17 16 15 14 13  
These highly integrated PN junction diode arrays are espe-  
cially effective for use in PC notebooks and motherboards,  
engineering workstations and portable battery-powered  
devices such as PDAs and cellular phones.  
Space savings, as compared to popular BA V99 SOT23  
based implementations, can yield a 75 % reduction in  
utilized board area. In addition, significant assembly cost  
reductions and manufacturing integrity improvements can  
be realized.  
1
2
3
4
5
6
VSS  
7
8
9
10 11 12  
VDD  
Two package options are available. Model 2DEA consists of  
20 bi-directional diode pairs in a miniature 24-pin JEDEC  
QSOP package. The 2DEB consists of 17 bi-directional  
diode pairs in a traditional wide-body SOIC JEDEC package.  
Electrical & Environmental Characteristics  
Electrical Characteristics  
Supply Voltage  
Symbol  
- V  
Minimum  
-0.3  
Nominal  
Maximum  
Unit  
V
V
12  
DD  
SS  
Voltage @ any Channel  
Channel Clamp Current (continuous)  
Forward Voltage:  
V
-0.3  
V
+ 0.5  
15  
V
in  
C
DD  
I
mA  
@I = 1 mA  
@I = 12 mA  
f
V
0.8  
0.1  
0.9  
V
V
f
f
1.5  
10  
5
Leakage Current @ V <V <V  
= 12 V  
µA  
pF  
SS in DD  
Diode Capacitance  
Environmental Characteristics  
Operating Temperature  
T
-55  
-65  
+125  
+150  
°C  
°C  
J
Storage Temperature  
Diode Power Rating  
T
stg  
20  
mW/diode  
ESD Performance Withstand*:  
Contact Discharge  
8
15  
9
16  
kV  
kV  
Air Discharge  
* Note: IEC 61000-4-2 ESD test performance is measured at the systems level and system designs, enclosure shielding and other conventional ESD control measures usually influence  
the results of these tests. Testing on the component level serves as an indicator that the system passes a specific compliance step, but does not ensure that the system passes at that  
level. The Model 2DEA/DEB device, therefore, can support successful implementation of the IEC 61000-4-2 system level ESD standard.  
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex  
Specifications are subject to change without notice.  
Customers should verify actual device performance in their specific applications.  
123

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