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2DD2098R-13 PDF预览

2DD2098R-13

更新时间： 2024-11-14 07:27:59
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 175K
描述
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR

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中文翻译

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2DD2098R-13 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMALL OUTLINE, R-PSSO-F3
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：2.33
外壳连接：COLLECTOR最大集电极电流 (IC)：5 A
集电极-发射极最大电压：20 V配置：SINGLE
最小直流电流增益 (hFE)：180JESD-30 代码：R-PSSO-F3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：NPN
最大功率耗散 (Abs)：1 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Matte Tin (Sn)端子形式：FLAT
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：220 MHzBase Number Matches：1

2DD2098R-13 数据手册

 浏览型号2DD2098R-13的Datasheet PDF文件第2页浏览型号2DD2098R-13的Datasheet PDF文件第3页浏览型号2DD2098R-13的Datasheet PDF文件第4页 
2DD2098R  
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
•
•
•
•
•
•
•
Epitaxial Planar Die Construction  
Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A  
Complementary PNP Type Available (2DB1386)  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT89-3L  
TOR  
LLEC  
CO  
2,4  
3 E  
2 C  
1 B  
Mechanical Data  
•
•
Case: SOT89-3L  
Case Material: Molded Plastic, “Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
C 4  
T
1
ASE  
B
3
•
•
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
EMITTER  
EW  
VI  
OP  
Schematic and Pin Configuration  
•
•
•
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.072 grams (approximate)  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
Continuous Collector Current  
Symbol  
VCBO  
VCEO  
VEBO  
ICM  
Value  
50  
20  
6
10  
5
Unit  
V
V
V
A
A
IC  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Rθ  
Value  
1
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
125  
°C/W  
°C  
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C  
Operating and Storage Temperature Range  
JA  
-55 to +150  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
Symbol  
Min  
Typ  
Max  
Unit  
Conditions  
IC = 50μA, IE = 0  
IC = 1mA, IB = 0  
IE = 50μA, IC = 0  
VCB = 40V, IE = 0  
VEB = 5V, IC = 0  
50  
20  
6
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
0.5  
⎯
⎯
μA  
μA  
Emitter Cut-Off Current  
0.5  
IEBO  
ON CHARACTERISTICS (Note 4)  
Collector-Emitter Saturation Voltage  
DC Current Gain  
0.3  
1.0  
V
VCE(SAT)  
hFE  
⎯
180  
IC = 4A, IB = 0.1A  
390  
⎯
⎯
IC = 0.5A, VCE = 2V  
SMALL SIGNAL CHARACTERISTICS  
VCE = 6V, IE = -50mA  
f = 100MHz  
Transition Frequency  
Output Capacitance  
220  
14  
MHz  
pF  
fT  
⎯
⎯
⎯
⎯
VCB = 20V, IE = 0,  
f = 1MHz  
Cob  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.  
DS31299 Rev. 4 - 2  
1 of 4  
2DD2098R  
© Diodes Incorporated  
www.diodes.com  
1234

中文翻译

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