Datasheet > 2DD2150R

2DD2150R

更新时间： 2024-02-08 21:52:22

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
4页	148K
描述
NPN SURFACE MOUNT TRANSISTOR

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中文翻译

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2DD2150R 数据手册

2DD2150R

NPN SURFACE MOUNT TRANSISTOR

Features

•

Epitaxial Planar Die Construction

Ideally Suited for Automated Assembly Processes

Ideal for Medium Power Switching or Amplification Applications

Lead Free By Design/RoHS Compliant (Note 1)

"Green" Device (Note 2)

SOT89-3L

Qualified to AEC-Q101 Standards for High Reliability

TOR

LLEC

2,4

Mechanical Data

3 E

2 C

1 B

•

Case: SOT89-3L

Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

C 4

ASE

•

Moisture Sensitivity: Level 1 per J-STD-020C

Terminals: Finish — Matte Tin annealed over Copper leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

EMITTER

•

Marking & Type Code Information: See Page 3

Ordering Information: See Page 3

Weight: 0.072 grams (approximate)

Schematic and Pin Configuration

Maximum Ratings @T_A= 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_CM

Value

Unit

Peak Pulse Current

Continuous Collector Current

I_C

Thermal Characteristics

Characteristic

Symbol

P_D

R_θ

Value

Unit

Power Dissipation (Note 3) @ T_A= 25°C

125

°C/W

°C

Thermal Resistance, Junction to Ambient Air (Note 3) @ T_A= 25°C

Operating and Storage Temperature Range

-55 to +150

T_j, T_STG

Electrical Characteristics @T_A= 25°C unless otherwise specified

Characteristic

OFF CHARACTERISTICS (Note 4)

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

Symbol

Min

Typ

Max

Unit

Conditions

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

⎯

_C= 50μA, I_E= 0

_C= 1mA, I_B= 0

_E= 50μA, I_C= 0

_CB= 30V, I_E= 0

_EB= 5V, I_C= 0

0.1

⎯

μA

Emitter Cut-Off Current

0.1

I_EBO

ON CHARACTERISTICS (Note 4)

Collector-Emitter Saturation Voltage

DC Current Gain

0.2

0.5

V_CE(SAT)

h_FE

⎯

180

_C= 2A, I_B= 0.1A

390

⎯

_C= 100mA, V_CE= 2V

SMALL SIGNAL CHARACTERISTICS

V_CE= 2V, I_E= -0.1A

f = 100MHz

Transition Frequency

Output Capacitance

160

MHz

f_T

⎯

V_CB= 10V, I_E= 0,

f = 1MHz

C_ob

Notes:

1. No purposefully added lead.

2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can

be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.

DS31148 Rev. 3 - 2

1 of 4

2DD2150R

www.diodes.com

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