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2DD1621T

更新时间： 2024-01-08 05:27:34
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管
页数 文件大小 规格书
4页 207K
描述
NPN SURFACE MOUNT TRANSISTOR

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2DD1621T 数据手册

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2DD1621T  
NPN SURFACE MOUNT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
•
•
•
•
•
Epitaxial Planar Die Construction  
Ideally Suited for Automated Assembly Processes  
Ideal for Medium Power Switching or Amplification Applications  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 2)  
SOT89-3L  
Mechanical Data  
TOR  
LLEC  
2,4  
CO  
•
•
Case: SOT89-3L  
Case Material: Molded Plastic, "Green” Molding Compound.  
UL Flammability Classification Rating 94V-0  
3 E  
2 C  
1 B  
C 4  
T
1
ASE  
•
•
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish — Matte Tin annealed over Copper leadframe  
(Lead Free Plating). Solderable per MIL-STD-202, Method 208  
B
3
•
•
•
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.072 grams (approximate)  
EMITTER  
EW  
VI  
OP  
Schematic and Pin Configuration  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
30  
25  
6.0  
2.0  
Unit  
V
V
V
A
Collector Current  
Thermal Characteristics  
Characteristic  
Symbol  
Value  
1
Unit  
W
Power Dissipation (Note 3) @ TA = 25°C  
PD  
125  
°C/W  
Thermal Resistance, Junction to Ambient Air (Note 3) @TA = 25°C  
Operating and Storage Temperature Range  
Rθ  
JA  
-55 to +150  
°C  
TJ, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 4)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
Symbol  
Min  
Typ  
Max  
Unit  
Test Conditions  
C = 10μA, IE = 0  
30  
25  
6.0  
⎯
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
C = 1mA, IB = 0  
V
C = 10μA, IC = 0  
100  
nA  
nA  
V
CB = 20V, IE = 0  
Emitter-Base Cutoff Current  
100  
IEBO  
⎯
VEB = 4.0V, IC = 0  
ON CHARACTERISTICS (Note 4)  
400  
⎯
200  
65  
⎯
⎯
VCE = 2.0V, IC = 0.1A  
DC Current Gain  
hFE  
⎯
V
CE = 2.0V, IC = 1.5A  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
0.12  
0.9  
0.4  
1.2  
V
V
VCE(SAT)  
VBE(SAT)  
⎯
⎯
IC = 1.5A, IB = 75mA  
IC = 1.5A, IB = 75mA  
SMALL SIGNAL CHARACTERISTICS  
VCE = 10V, IC = 50mA,  
f = 100MHz  
VCB = 10V, IE = 0, f = 1MHz  
Current Gain-Bandwidth Product  
300  
16  
MHz  
pF  
fT  
⎯
⎯
⎯
⎯
Output Capacitance  
SWITCHING CHARACTERISTICS  
Turn On Time  
Cobo  
70  
170  
25  
ns  
ns  
ns  
ton  
tstg  
tf  
⎯
⎯
⎯
⎯
⎯
⎯
VCE = 12V, VBE = 5V,  
IB1 = IB2 = 25mA, IC = 500mA  
Storage Time  
Fall Time  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can  
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.  
DS31240 Rev. 2 - 2  
1 of 4  
www.diodes.com  
2DD1621T  
© Diodes Incorporated  
1234

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