2DD1664P/Q/R
NPN SURFACE MOUNT TRANSISTOR
Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary PNP Type Available (2DB1132)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
SOT89-3L
Mechanical Data
TOR
LLEC
2,4
CO
•
•
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
3 E
2 C
1 B
C 4
T
•
•
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
1
ASE
B
3
•
•
•
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
EMITTER
EW
VI
OP
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
Value
Unit
V
40
32
5
VCBO
VCEO
VEBO
ICM
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Peak Pulse Current
2
A
Continuous Collector Current
1
A
IC
Thermal Characteristics
Characteristic
Symbol
PD
Rθ
Value
1
Unit
W
Power Dissipation (Note 3) @ TA = 25°C
125
°C/W
°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
JA
-55 to +150
Tj, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Symbol
Min
Typ
Max
Unit
Conditions
C = 50μA, IE = 0
40
32
5
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
I
I
I
C = 1mA, IB = 0
V
E = 50μA, IC = 0
0.5
⎯
⎯
μA
μA
V
V
CB = 20V, IE = 0
EB = 4V, IC = 0
Emitter Cut-Off Current
0.5
IEBO
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
0.12
⎯
⎯
0.4
180
270
390
V
VCE(SAT)
⎯
82
120
180
IC = 500mA, IB = 50mA
VCE = 3V, IC = 100mA
⎯
⎯
⎯
2DD1664P
2DD1664Q
2DD1664R
DC Current Gain
hFE
⎯
SMALL SIGNAL CHARACTERISTICS
VCE = 5V, IE = -50mA,
f = 100MHz
VCB = 10V, IE = 0,
f = 1MHz
Transition Frequency
280
10
MHz
pF
fT
⎯
⎯
⎯
⎯
Output Capacitance
Cob
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31143 Rev. 4 - 2
1 of 4
www.diodes.com
2DD1664P/Q/R
© Diodes Incorporated
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