Datasheet > 2A5A

2A5A

更新时间： 2022-01-19 02:49:00

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
4页	124K
描述
TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 300MA I(C) \| SOT-172D

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2A5A 数据手册

2A5/2A5A

0.5 Watts, 20 Volts, Class A

Linear to 2000 MHz

GENERAL DESCRIPTION

CASE OUTLINE

2A5 - 55ET, STYLE 2

The 2A5/2A5A is a COMMON EMITTER transistor capable of providing 0.5

Watt of Class A, RF output power to 2000 MHz. This transistor is specifically

designed for general Class A amplifier applications. It utilizes gold

metalization and diffused ballasting to provide high reliability and supreme

ruggedness.

ABSOLUTE MAXIMUM RATINGS

2A5A - 55EU, STYLE 2

Maximum Power Dissipation @ 25^oC

5.3 Watts

Maximum Voltage and Current

BVces

BVebo

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

50 Volts

3.5 Volts

300 mAmps

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

- 65 to + 150^oC

+ 200^oC

ELECTRICAL CHARACTERISTICS @ 25 ^OC

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX UNITS

Pout

VSWR

Power Out

Power Input

Power Gain

Transition Frequency

Load Mismatch Tolerance

F = 2000 MHz

Ic = 140 mA

Vcc = 20 Volts

Vce = 20 V, Ic = 140 A

0.5

0.8

Watts

0.1

7.0

3.4

9.0

3.7

GHz

30:1

BVebo

BVces

BVceo

h_FE

Emitter to Base Breakdown

Collector to Emitter Breakdown

DC Current Gain

Capacitance

Thermal Resistance

Ie = 1 mA

Ic =10 mA

Ic = 10 mA

Vce = 5 V, Ic = 100 mA

Vcb = 28V, f = 1 MHz

3.5

Volts

Cob

2.0

3.0

^oC/W

θjc

Issue August 1996

GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT

BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,

THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.

GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120

12 3 4

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