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2A8-2 PDF预览

2A8-2

更新时间: 2024-11-24 06:16:51
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其他 - ETC /
页数 文件大小 规格书
2页 35K
描述
0.5 Watts, 20 Volts, Class A Linear to 2000 MH

2A8-2 数据手册

 浏览型号2A8-2的Datasheet PDF文件第2页 
2A8  
0.5 Watts, 20 Volts, Class A  
Linear to 2000 MHz  
GENERAL DESCRIPTION  
CASE OUTLINE  
55EU, STYLE 2  
The 2A8 is a COMMON EMITTER transistor capable of providing 0.5 Watts  
of Class A, RF output power at 2000 MHz. This transistor is specifically  
designed for general Class A amplifier applicatons. It utilizes gold  
metalization and diffused ballasting to provide high reliability and supreme  
ruggedness.  
ABSOLUTE MAXIMUM RATINGS  
Maximum Power Dissipation @ 25oC  
5.3 Watts  
Maximum Voltage and Current  
BVces  
BVebo  
Ic  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
50 Volts  
3.5 Volts  
300 mA  
Maximum Temperatures  
Storage Temperature  
Operating Junction Temperature  
- 65 to + 150oC  
+ 150oC  
ELECTRICAL CHARACTERISTICS @ 25 OC  
SYMBOL  
CHARACTERISTICS  
TEST CONDITIONS  
MIN  
TYP  
MAX UNITS  
Pout  
Pin  
Pg  
Power Out @ 1db Comp. Pt.  
Power Input  
Power Gain  
Efficiency  
Load Mismatch Tolerance  
F = 2.0 GHz  
Vcc = 20 Volts  
Ic = 150mA  
0.5  
7.0  
Watts  
Watts  
dB  
0.1  
9.0  
20  
%
ηc  
VSWR1  
30:1  
BVebo  
BVces  
BVceo  
Hfe  
Emitter to Base Breakdown  
Collector to Emitter Breakdown  
Collector to Emitter Breakdown  
DC Current Gain  
Capacitance  
Thermal Resistance  
Ie = 1 mA  
Ic = 10mA  
Ic = 10 mA  
Vce = 5 V, Ic = 100 mA  
Vcb = 28V, f = 1 MHz  
3.5  
50  
21  
20  
Volts  
Volts  
Volts  
Cob  
3.0  
28  
4.0  
33  
pF  
oC/W  
θjc  
Issue September 1995  
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT  
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,  
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.  
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120  

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