Datasheet > 2SK1109

2SK1109

更新时间： 2024-02-18 01:43:21

品牌	Logo	应用领域
日电电子 - NEC		晶体转换器晶体管场效应晶体管
页数	文件大小	规格书
8页	47K
描述
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM

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技术参数
数据手册

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2SK1109 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.61
Is Samacsys：	N	FET 技术：	JUNCTION
最高工作温度：	125 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	0.08 W	子类别：	Other Transistors
表面贴装：	YES	Base Number Matches：	1

2SK1109 数据手册

DATA SHEET

JUNCTION FIELD EFFECT TRANSISTOR

2SK1109

N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

FOR IMPEDANCE CONVERTER OF ECM

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The 2SK1109 is suitable for converter of ECM.

0.8

FEATURES

• Compact package

1. Source

2. Drain

3. Gate

• High forward transfer admittance

1000 µS TYP. (I^DSS= 100 µA)

1600 µS TYP. (I^DSS= 200 µA)

• Includes diode and high resistance at G - S

ORDERING INFORMATION

PART NUMBER

2SK1109

PACKAGE

SC-59 (MM)

2.9 ± 0.2

1.1

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage ^Note

V^DSX

–20

EQUIVALENT CIRCUIT

Gate to Drain Voltage

Drain Current

V^GDO

I^D

°C

Drain

Gate Current

I^G

Total Power Dissipation

Junction Temperature

Storage Temperature

P^T

T^j

Gate

125

T^stg

–55 to +125 °C

Source

Note V^GS= –1.0 V

Remark Please take care of ESD (Electro Static Discharge) when you handle the device in this document.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D15940EJ1V0DS00 (1st edition)

Date Published January 2002 NS CP(K)

Printed in Japan

2002

12 3 4 5 6 7 8

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