生命周期: | Active | 零件包装代码: | SC-67 |
包装说明: | 2-10R1A, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.46 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 0.15 A |
基于收集器的最大容量: | 4 pF | 集电极-发射极最大电压: | 250 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 20 |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 10 W |
最大功率耗散 (Abs): | 2 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子面层: | TIN LEAD | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 240 MHz |
VCEsat-Max: | 1 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC4448_15 | JMNIC |
获取价格 |
Silicon Power Transistors | |
2SC4448_2015 | JMNIC |
获取价格 |
Silicon Power Transistors | |
2SC4448O | TOSHIBA |
获取价格 |
TRANSISTOR 0.15 A, 250 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
2SC4448R | TOSHIBA |
获取价格 |
TRANSISTOR 0.15 A, 250 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power | |
2SC4448Y | TOSHIBA |
获取价格 |
暂无描述 | |
2SC4449 | SANYO |
获取价格 |
TV camera Deflection, High-Voltage Driver Applications | |
2SC4449-AB | ONSEMI |
获取价格 |
Small Signal Bipolar Transistor, 0.05A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | |
2SC4449E | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 50MA I(C) | TO-92 | |
2SC4449E-AA | ONSEMI |
获取价格 |
50mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 | |
2SC4449E-AA | ROCHESTER |
获取价格 |
50mA, 300V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |