2SC1766
BIPOLAR TRANSISTOR (NPN)
FEATURES
High Speed Switching Time
Low Collector-emitter saturation voltage
For Power Amplifier Application
Surface Mount device
SOT-89
MECHANICAL DATA
Case: SOT-89
Case Material: Molded Plastic. UL flammability
Classification Rating: 94V-0
Weight: 0.055 grams (approximate)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Value
Unit
V
Collector-Base Voltage
50
Collector-Emitter Voltage
50
V
Emitter-Base Voltage
5
2
V
Collector Current
A
Collector Power Dissipation
PC
500
mW
°C/W
°C
°C
Thermal Resistance From Junction To Ambient
Junction Temperature
RθJA
TJ
250
150
Storage Temperature
TSTG
-55 ~+150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min Typ Max Unit
Conditions
IC=100uA,IE=0
V(BR)CBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
50
50
5
V
V
V(BR)CEO
V(BR)EBO
ICBO
IC=1mA,IB=0
IE=100uA,IC=0
VCB=50V, IE=0
VEB=5V, IC=0
V
0.1
0.1
390
uA
uA
Emitter cut-off current
IEBO
hFE1
82
40
VCE=2V, IC=0.5A
VCE=2V, IC=2A
IC=1A,IB=50mA
IC=1A,IB=50mA
DC current gain
hFE2
*
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
0.5
1.2
V
V
VCE=2V, IC=0.5A, f=100
150
MHz
MHz
*Pulse test:pulse width≤300us,duty cycle≤2.0%
CLASSIFICATION OF hFE
Rank
Range
Marking
P
Q
Y
82-180
P1766
120-270
Q1766
180-390
Y1766
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