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2N7002V PDF预览

2N7002V

更新时间: 2024-01-18 13:57:03
品牌 Logo 应用领域
JCST PC开关光电二极管晶体管
页数 文件大小 规格书
1页 890K
描述
Small Signal Field-Effect Transistor

2N7002V 技术参数

是否无铅:不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:0.97
Samacsys Confidence:3Samacsys Status:Released
2D Presentation:https://componentsearchengine.com/2D/0T/1139404.1.1.pngSchematic Symbol:https://componentsearchengine.com/symbol.php?partID=1139404
PCB Footprint:https://componentsearchengine.com/footprint.php?partID=11394043D View:https://componentsearchengine.com/viewer/3D.php?partID=1139404
Samacsys PartID:1139404Samacsys Image:https://componentsearchengine.com/Images/9/2N7002V.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/2N7002V.jpgSamacsys Pin Count:6
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:SO Transistor Flat Lead
Samacsys Footprint Name:2N7002VSamacsys Released Date:2019-04-12 03:44:09
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):0.28 A
最大漏极电流 (ID):0.28 A最大漏源导通电阻:7.5 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):7 pF
JESD-30 代码:R-PDSO-F6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.25 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2N7002V 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
SOT-563 Plastic-Encapsulate MOSFETS  
2N7002V MOSFET (N-Channel)  
SOT-563  
FEATURES  
Dual N-channel MOSFET  
Low on-resistance  
Low gate threshold voltage  
Low input capacitance  
Fast switching speed  
Low input/output leakage  
1
Marking: KAS  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
VDS  
Parameter  
Drain-Source voltage  
Drain Current  
Value  
60  
Units  
V
ID  
115  
mA  
mW  
PD  
TJ  
Power Dissipation  
Junction Temperature  
Storage Temperature  
150  
150  
Tstg  
-55-150  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)DSS  
Vth(GS)  
lGSS  
Test  
conditions  
Min  
Typ  
Max  
Unit  
Drain-Source Breakdown Voltage  
Gate-Threshold Voltage  
Gate-body Leakage  
VGS=0 V, ID=10 µA  
VDS=VGS, ID=250 µA  
VDS=0 V, VGS=±25 V  
VDS=60 V, VGS=0 V  
VGS=10 V, VDS=7 V  
VGS=10 V, ID=500mA  
VGS=5 V, ID=50mA  
VDS=10 V, ID=200mA  
VGS=10V, ID=500mA  
VGS=5V, ID=50mA  
IS=115mA, VGS=0 V  
60  
1
V
nA  
nA  
±80  
80  
Zero Gate Voltage Drain Current  
On-state Drain Current  
IDSS  
mA  
ID(ON)  
500  
80  
7
7
Drain-Source On-Resistance  
Forward Trans conductance  
Drain-source on-voltage  
rDS(0n)  
gfs  
mS  
V
3.75  
0.375  
1.2  
50  
VDS(on)  
V
V
Diode Forward Voltage  
Input Capacitance  
VSD  
Ciss  
0.55  
pF  
VDS=25V, VGS=0V, f=1MHz  
Output Capacitance  
COSS  
CrSS  
25  
Reverse Transfer Capacitance  
SWITCHING TIME  
5
td(on)  
td(off)  
20  
40  
VDD=25 V, RL=50Ω  
ID=500mA,VGEN=10 V  
RG=25 Ω  
Turn-on Time  
Turn-off Time  
ns  
C,Nov,2013  

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