是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | not_compliant | 风险等级: | 5.71 |
JESD-609代码: | e0 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
端子面层: | TIN LEAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
触发设备类型: | SCR | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2N2329A | NJSEMI |
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SILICON CONTROLLED RECTIFIERS | |
2N2329A | MICROSEMI |
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SILICON CONTROLLED RECTIFIER | |
2N2329AS | MICROSEMI |
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SILICON CONTROLLED RECTIFIER | |
2N2329E3 | MICROSEMI |
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Silicon Controlled Rectifier, 0.3454A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5, | |
2N2329LEADFREE | CENTRAL |
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Silicon Controlled Rectifier, 1.6A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-39, HE | |
2N2329S | MICROSEMI |
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SILICON CONTROLLED RECTIFIER | |
2N2329SE3 | MICROSEMI |
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Silicon Controlled Rectifier, 0.3454A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-5, | |
2N2330 | ETC |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-5 | |
2N2331 | ETC |
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TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-18 | |
2N2332 | ETC |
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TRANSISTOR | BJT | PNP | 5V V(BR)CEO | 100MA I(C) | TO-18 |