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27LV64-30ISO PDF预览

27LV64-30ISO

更新时间: 2024-11-07 22:44:59
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器
页数 文件大小 规格书
12页 65K
描述
64K (8K x 8) Low-Voltage CMOS EPROM

27LV64-30ISO 数据手册

 浏览型号27LV64-30ISO的Datasheet PDF文件第2页浏览型号27LV64-30ISO的Datasheet PDF文件第3页浏览型号27LV64-30ISO的Datasheet PDF文件第4页浏览型号27LV64-30ISO的Datasheet PDF文件第5页浏览型号27LV64-30ISO的Datasheet PDF文件第6页浏览型号27LV64-30ISO的Datasheet PDF文件第7页 
27LV64  
64K (8K x 8) Low-Voltage CMOS EPROM  
FEATURES  
PACKAGE TYPES  
DIP/SOIC  
• Wide voltage range 3.0V to 5.5V  
• High speed performance  
VPP • 1  
28 VCC  
27 PGM  
26 NC  
25 A8  
24 A9  
23 A11  
22 OE  
21 A10  
20 CE  
19 O7  
18 O6  
17 O5  
16 O4  
15 O3  
- 200 ns access time available at 3.0V  
• CMOS Technology for low power consumption  
- 8 mA active current at 3.0V  
A12  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
O0  
O1  
O2  
2
3
4
5
6
- 20 mA active current at 5.5V  
7
- 100 µA standby current  
8
• Factory programming available  
• Auto-insertion-compatible plastic packages  
• Auto ID aids automated programming  
• Separate chip enable and output enable controls  
• High speed “express” programming algorithm  
• Organized 8K x 8: JEDEC standard pinouts  
- 28-pin Dual-in-line package  
9
10  
11  
12  
13  
VSS 14  
PLCC  
- 32-pin PLCC Package  
- 28-pin SOIC package  
- Tape and reel  
5
29  
A6  
A8  
A9  
A11  
NC  
OE  
A10  
CE  
O7  
• Available for the following temperature ranges:  
6
28  
A5  
A4  
A3  
A2  
A1  
A0  
NC  
O0  
- Commercial:  
- Industrial:  
0˚C to +70˚C  
7
27  
8
26  
-40˚C to +85˚C  
9
25  
10  
11  
12  
13  
24  
23  
DESCRIPTION  
22  
21  
O6  
The Microchip Technology Inc. 27LV64 is a low-voltage  
(3.0 volt) CMOS EPROM designed for battery powered  
applications. The device is organized as 8K x 8 (8K-  
Byte) non-volatile memory product. The 27LV64 con-  
sumes only 8mA maximum of active current during a  
3.0 volt read operation therefore improving battery per-  
formance. This device is designed for very low voltage  
applications where conventional 5.0 volt only EPROMs  
can not be used. Accessing individual bytes from an  
address transition or from power-up (chip enable pin  
going low) is accomplished in less than 200 ns at  
3.0V.This device allows system designers the ability to  
use low voltage non-volatile memory with today’s low  
voltage microprocessors and peripherals in battery  
powered applications.  
A complete family of packages is offered to provide the  
most flexibility in applications. For surface mount appli-  
cations, PLCC or SOIC packaging is available. Tape  
and reel packaging is also available for PLCC or SOIC  
packages.  
1996 Microchip Technology Inc.  
DS11024E-page 1  
This document was created with FrameMaker 4 0 4  

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